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Enhanced Magnetoresistance in In-Plane Monolayer MoS2 with CrO2 Electrodes

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Abstract

Magnetoresistance of monolayer MoS2 is reported to increase when used in in-plane configuration with CrO2 half-metal ferromagnet (HMF) electrodes. Density functional theory (DFT)- and non-equilibrium Green’s function (NEGF)-based simulations show that high magnetoresistance (MR) values of ∼860% can be achieved in in-plane monolayer MoS2 with CrO2 electrodes, which is much higher than the MR value of ∼300% for nine-layer and the MR value of ∼70% for single-layer out-of-plane MoS2 reported in Dolui et al., Phys. Rev. B 90(R), 041401 (2014) past by other researchers. High spin-injection efficiency ∼100% is also obtained at high bias voltages. High MR and perfect spin filtration suggests the importance of this configuration in spintronics applications.

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  1. National Institute of Technology, Kurukshetra, India

    Abhishek Kumar & Sudhanshu Choudhary

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  1. Abhishek Kumar
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  2. Sudhanshu Choudhary
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Correspondence to Abhishek Kumar.

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Kumar, A., Choudhary, S. Enhanced Magnetoresistance in In-Plane Monolayer MoS2 with CrO2 Electrodes. J Supercond Nov Magn 31, 3245–3250 (2018). https://doi.org/10.1007/s10948-018-4583-1

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  • DOI: https://doi.org/10.1007/s10948-018-4583-1

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