Abstract
Electroplated bismuth (Bi) is commonly used in transition-edge sensors (TESs) for X-rays because of its high stopping power and low heat capacity (Collan in Phys Rev B 1:2888, 1970, Yan in Appl Phys Lett 111:192602, 2017). Electroplated Bi is usually grown on top of another metal that acts as seed layer, typically gold (Au), making it challenging to extrapolate its thermoelectric properties. In this work, we present four-wire resistance measurement structures that allow us to measure resistance as a function of temperature of electroplated Bi independently of Au. The results show that the thermal conductivity of the Bi at 3 K is high enough to ensure the correct thermalization of X-ray photons when used as an absorber for TESs.
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Data Availability
The data that support the findings of this study are available on request from the corresponding author OQ.
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Acknowledgements
This research is funded by Argonne National Laboratory LDRD proposals 2018-002-N0 and 2021-0059; is supported by the Accelerator and Detector R&D program in Basic Energy Sciences’ Scientific User Facilities (SUF) Division at the Department of Energy; uses resources of the Advanced Photon Source and Center for Nanoscale Materials, U.S. Department of Energy (DOE) Office of Science User Facilities operated for the DOE Office of Science by the Argonne National Laboratory under Contract No. DE-AC02-06CH11357; and makes use of the Pritzker Nanofabrication Facility of the Institute for Molecular Engineering at the University of Chicago, which receives support from Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205), a node of the National Science Foundation’s National Nanotechnology Coordinated Infrastructure.
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Quaranta, O., Gades, L.M., Xue, C. et al. Devices for Thermal Conductivity Measurements of Electroplated Bi for X-ray TES Absorbers. J Low Temp Phys 209, 1165–1171 (2022). https://doi.org/10.1007/s10909-022-02876-9
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DOI: https://doi.org/10.1007/s10909-022-02876-9