Abstract
This work focuses on the structural and electrical properties of CaMn1−xFexO3−0.5x (x = 0.0 and 0.20) perovskite compounds prepared using the ceramic method. XRD patterns confirm the formation of the orthorhombic structure with Pnma space group for the samples, and Rietveld method was used to estimate their different structural parameters. Refinement results show that the cell parameters and unit cell volume increase with increasing Fe content. The complex impedance spectroscopy technique was used to investigate the frequency and temperature dependence of electrical conductance and electrical impedance. The total conductance curves of the sample are found to obey Jonscher power law GT(ω) = Gdc + Gac = Gdc + Aωn with an increase in frequency exponent (n) as temperature increases. Electrical impedance results show the presence of the electrical relaxation phenomenon for the samples. The activation energy deduced from the analysis of the conductance curves matches very well with the value estimated from the relaxation time, indicating that relaxation process and electrical conductivity are attributed to the same defect. The Nyquist representations have been analyzed using a proposed electrical circuit, and the results show that the grain boundary contribution is responsible to the conduction mechanism of the prepared samples.
Similar content being viewed by others
References
D.K. Mahato, A. Dutta, T.P. Sinha, J. Mater. Sci. 45, 6757 (2010)
D.K. Mahato, A. Dutta, T.P. Sinha, Bull. Mater. Sci. 120, 455 (2011)
C. Bharti, T.P. Sinha, Phys. B 406, 624 (2011)
K.I. Kobayashi, T. Kimura, H. Sawada, K. Terakura, Y. Tokura, Nature 395, 677 (1998)
J.B. Goodenough, Prog. Solid State Chem. 5, 145 (1971)
D.P. Karim, A.T. Aldred, Phys. Rev. B 20, 2255 (1979)
W.J. Weber, C.W. Griffen, J.L. Bates, J. Am. Chem. Soc. 70, 265 (1987)
S. Hcini, A. Selmi, H. Rahmouni, A. Omri, M.L. Bouazizi, Ceram. Int. 16, 8 (2016)
J.H. Kuo, H.U. Anderson, D.M. Sparlin, P.E. Parris, J. Solid State Chem. 83, 52 (1989)
R. Von Helmolt, Phys. Rev. Lett. 71, 2331 (1993)
A. Omri, E. Dhahri, M. Es-Souni, M.A. Valente, L.C. Costa, J. Alloys Compd. 536, 173 (2012)
S. Hcini, A. Omri, M.L. Bouazizi, A. Dhahri, K. Touileb, J. Mater. Sci. Mater. Electron. 8674, 18 (2018)
A. Omri, M. Bejar, M. Sajieddine, E. Dhahri, E.K. Hlil, M. Es-Souni, Phys. B 407, 2566 (2012)
H. Rahmouni, M. Nouiri, R. Jemai, N. Kallel, F. Rzigua, A. Selmi, K. Khirouni, S. Alaya, J. Magn. Magn. Mater. 316, 23–28 (2007)
T. Tahri, N. Hamdaoui, A. Omri, S. Hcini, L. Beji, E. Dhahri, M. Es-Souni, J. Mater. Sci. Mater. Electron. 27, 10525 (2016)
N.F. Mott, E.A. Davis, Electronic Processes in Non-crystalline Materials (Clarendon Press, Oxford, 1979)
K. Funke, Prog. Solid State Chem. 22, 111–195 (1993)
K. Batoo, Phys. B 406, 382 (2011)
J. Guo, H. Zhang, Z. He, S. Li, Z. Li, J. Mater. Sci. Mater. Electron. 29, 2491 (2018)
D. Johnson, ZView: a Software Program for IES Analysis, Version 2.8, Scribner Associates, Inc. Southern Pines, NC (2008)
K.R. Krishna, D. Ravinder, K.V. Kumar, A.Ch. Lincon, Matter Phys. 2153, 57 (2012)
J.L. Dormann, M. Nogues, J. Phys. Condens. Matter 2, 1223 (1990)
N. Rezlescu, E. Rezlescu, C. Pasnicu, M.L. Craus, J. Phys. Condens. Matter 6, 5707 (1994)
G. Williams, D.C. Watts, Trans. Faraday Soc. 66, 80 (1970)
C.G. Koops, Phys. Rev. 83, 121 (1951)
M.S. Sahasrabudhe, S.I. Patil, S.K. Date, Solid State Commun. 137, 595 (2006)
Acknowledgements
This work is supported by the Tunisian National Ministry of Higher Education, Scientific Research and Technology. This work was supported by funds from FEDER (Programa Operacional Factores de Competitividade COMPETE) and from FCT-Fundação para a Ciência e a Tecnologia under the Project No. UID/FIS/04564/2016. Access to TAIL-UC facility (XRD, SEM and DSC) funded under QREN-Mais Centro Project No. ICT_2009_02_012_1890 is gratefully acknowledged.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Tahri, T., Omri, A., Hamdaoui, N. et al. Structural, Electrical and Dielectric of Fe-Doped CaMn1−xFexO3−0.5x (x = 0.0 and 0.20). J Low Temp Phys 195, 230–251 (2019). https://doi.org/10.1007/s10909-019-02157-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10909-019-02157-y