Abstract
A combination of two methods — laser modulation and 3ω — has been used to determine the heat capacity, heat conductivity, and heat diffusivity of zinc oxide nanostructures. A significant difference between the thermal parameters of zinc oxide nanostructures grown by different technological methods has been revealed. It has been shown that the relatively low heat conductivity and heat diffusivity values of oxide zinc nanostructures are due to both the internal defects and the contact resistance between the film and its base — the substrate.
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Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 83, No. 4, pp. 809–813, July–August, 2010.
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Igamberdiev, K.T., Yuldashev, S.U., Kurbanov, S.S. et al. Thermal properties of semiconductor zinc oxide nanostructures. J Eng Phys Thermophy 83, 863–868 (2010). https://doi.org/10.1007/s10891-010-0407-2
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DOI: https://doi.org/10.1007/s10891-010-0407-2