Abstract
Wearable devices and flexible electronics have promoted the development of flexible thin film materials. Flexible films with excellent performance and adapted to the operating conditions of flexible electronic devices are required. Here, the flexible BiFe0.97Cr0.03O3/BiFe1−xMnxO3 (x = 0.05–0.09) ferroelectric thin films were successfully prepared on LaNiO3/fluorophlogopite (F-Mica) by the sol–gel method. The flexible BiFe0.97Cr0.03O3/BiFe0.93Mn0.07O3 (BFC0.03O/BFM0.07O) sample shows a best ferroelectricity with a real residual polarization value of 106.59 µC/cm2 was obtained from the Positive Up Negative Down (PUND). The flexible sample maintains true ferroelectric performance at different frequencies and shows excellent bending fatigue resistance after mechanical bending with 10000 cycles. The residual stress generated by mechanical bending increases the polarization of the flexible sample while maintaining the true ferroelectric polarization. The larger residual stress results in the enlargement of the defect. This provides an interesting approach to the ferroelectric regulation of flexible thin films. The flexible BiFe0.97Cr0.03O3/BiFe1−xMnxO3 thin films with excellent ferroelectricity and bending fatigue resistance are promising for the applications in high temperature flexible electronic components and sensors.
Similar content being viewed by others
Data availability
All data generated or analysed during this study are included in this published article [and its supplementary information files].
References
C. Bin, X. Hou, K. Wang, L. Liao, Y. Xie, H. Yang, H. Wei, Y. Liu, J. Wang, Interlayer coupling enhanced energy storage performance in a flexible BMT-BTO/BMT multilayer ferroelectric film capacitor. ACS Appl. Mater. Interfaces. 14, 50880–50889 (2022)
A.R. Jayakrishnan, A. Kumar, S. Druvakumar, J. Rosmin, M. Sudeesh, V.S. Puli, J. Silva, M. Gomes, K.C. Sekhar, Inorganic ferroelectric thin films and their composites for flexible electronic and energy device applications: current progress and perspectives. J. Mater. Chem. C 11, 827–858 (2023)
M. Tsai, J. Jiang, P. Shao, Y. Lai, J. Chen, S. Ho, Y. Chen, D. Tsai, Y. Chu, Oxide heteroepitaxy-based flexible ferroelectric transistor. ACS Appl. Mater. Interfaces. 11, 25882–25890 (2019)
J. Zhou, D. Sando, M. Summers, Y. Jia, K. Wang, N. Valanoor, Q. Zhang, Gelation chemistry and phase development of chemical solution deposition-derived Sm-doped BiFeO3 thin films: the role of Sm dopant. ACS Appl. Electron. Mater. 5, 1302–1310 (2023)
B. Sun, G. Zhou, L. Sun, H. Zhao, Y. Chen, F. Yang, Y. Zhao, Q. Song, ABO3 multiferroic perovskite for memristive memory and neuromorphic computing. Nanoscale Horiz. 6, 939–970 (2021)
T. Li, R. Li, Y. Chen, J. Liu, B. Li, L. Ju, K. Li, Z. Hu, The effect of thickness-dependent strain relaxation on magnetoelectric behaviors for highly C-axis oriented BiFeO3 films on Si substrate. J. Magn. Magn. Mater. 545, 168739 (2022)
C.R. Joshi, M. Acharya, M.S. Sheikh, J. Plombon, A. Gupta, Effect of cobalt substitution on the structural, ferroelectric, and magnetic properties of bismuth ferrite thin films. J. Appl. Phys. 132, 194102 (2022)
L. Jin, M. Lin, C. Li, D. Song, B. Yang, X. Zhu, Evolution of structure and electrical properties of epitaxial BiFeO3 thin films through solution and annealing atmosphere. J. Alloy Compd. 843, 155910 (2020)
M. Tomczyk, A. Mahajan, A. Tkach, P.M. Vilarinho, Interface-based reduced coercivity and leakage currents of BiFeO3 thin films: a comparative study. Mater. Des. 160, 1322–1334 (2018)
X. Liu, P. Li, C. Jin, H. Bai, Enhancement of the magnetization in the Fe3O4/BiFeO3 epitaxial heterostructures fabricated by magnetron sputtering. Appl. Phys. Lett. 99, 182511 (2011)
C. Prakash, A.K. Yaday, A. Dixit, Low power highly flexible BiFeO3-based resistive random access memory (RRAM) with the coexistence of negative differential resistance (NDR). Phys. Chem. Chem. Phys. 25, 19868–19881 (2023)
A.I. Kingon, S. Srinivasan, Lead zirconate titanate thin films directly on copper electrodes for ferroelectric, dielectric and piezoelectric applications. Nat. Mater. 4, 233–237 (2005)
J. Wu, Z. Fan, D. Xiao, J. Zhu, J. Wang, Multiferroic bismuth ferrite-based materials for multifunctional applications: ceramic bulks, thin films and nanostructures. Prog. Mater. Sci. 84, 335–402 (2016)
J. Chen, W. Xing, Q. Yun, W. Gao, C. Nie, S. Zhao, Effects of Ho, Mn co-doping on ferroelectric fatigue of BiFeO3 thin films. Electron. Mater. Lett. 11, 601–608 (2015)
M. Guo, G. Tan, W. Yang, L. Lv, M. Xue, Y. Liu, H. Ren, A. Xia, Resistive switching and ferroelectric properties in BiFeO3 superlattice films. Mater. Lett. 228, 13–16 (2018)
P. Zheng, B. Sun, Y. Chen, H. Elshekh, T. Yu, S. Mao, S. Zhu, H. Wang, Y. Zhao, Z. Yu, Photo-induced negative differential resistance in a resistive switching memory device based on BiFeO3/ZnO heterojunctions. Appl. Mater. Today. 14, 21–28 (2019)
L. Yin, W. Liu, G. Tan, H. Ren, Two-phase coexistence and multiferroic properties of Cr-doped BiFeO3 thin films. J. Supercond. Nov. Magn. 27, 2765–2772 (2014)
G. Kolhatkar, F. Ambriz-Vargas, R. Thomas, A. Ruediger, Microwave-assisted hydrothermal synthesis of BiFexCr1–xO3 ferroelectric thin films. Cryst. Growth Des. 17, 5697–5703 (2017)
P. Kharel, S. Talebi, B. Ramachandran, A. Dixit, V.M. Naik, M.B. Sahana, C. Sudakar, R. Naik, M.S.R. Rao, G. Lawes, Structural, magnetic, and electrical studies on polycrystalline transition-metal-doped BiFeO3 thin films. J. Phys.-Condens. Matter 21, 036001 (2009)
D. Ao, W. Liu, C. Liu, S. Dong, X. Wang, H. Ren, A. Xia, G. Tan, Anisotropic saturation magnetization in flexible BiFe0.95Cr0.05O3/BiFe0.95Mn0.05O3 superlattice thin films by sol–gel. Micro and Nanostruct. 166, 207230 (2022)
Z.J. Simón, J.A. López, J.A. Luz, G.O. Conde, K.M. Leyva, O.R. Herrera, M. Moreno, H.P. Hernández, E. Flores, Outstanding photoelectrical response in BiFeO3 hollow microspheres deposited by ultrasonic spray pyrolysis technique. J. Alloy Compd. 955, 170215 (2023)
M.N. Iliev, A.P. Litvinchuk, V.G. Hadjiev, M.M. Gospodinov, V. Skumryev, E. Ressouche, Phonon and magnon scattering of antiferromagnetic Bi2Fe4O9. Phys. Rev. B 81, 024302 (2010)
H. Hu, S.B. Krupanidhi, Current–voltage characteristics of ultrafine-grain ferroelectric pb(Zr, Ti)O3 thin films. J. Mater. Res. 9, 1484–1498 (1994)
W. Xing, Y. Ma, Z. Ma, Y. Bai, J. Chen, S. Zhao, Improved ferroelectric and leakage current properties of Er-doped BiFeO3 thin films derived from structural transformation. Smart Mater. Struct. 23, 085030 (2014)
X. Liang, J. Dai, G. Zhang, Great ferroelectric properties and narrow bandgaps of BiFeO3 thin films by (mg, mn) modifying. Appl. Surf. Sci. 586, 152751 (2022)
C. Nie, S. Zhao, Y. Bai, Q. Lu, The ferroelectric photovoltaic effect of BiCrO3/BiFeO3 bilayer composite films. Ceram. Int. 42, 14036–14040 (2016)
T. Schenk, E. Yurchuk, S. Mueller, U. Schroeder, S. Starschich, U. Böttger, T. Mikolajick, About the deformation of ferroelectric hystereses. Appl. Phys. Rev. 1, 041103 (2014)
W. Cai, C. Fu, Z. Lin, X. Deng, Vanadium doping effects on microstructure and dielectric properties of barium titanate ceramics. Ceram. Int. 37, 3643–3650 (2011)
W. Liu, M. Liu, R. Ma, R. Zhang, W. Zhang, D. Yu, Q. Wang, J. Wang, H. Wang, Mechanical strain-tunable microwave magnetism in flexible CuFe2O4 epitaxial thin film for wearable sensors. Adv. Funct. Mater. 28, 1705928 (2018)
C. Röder, F. Lipski, F. Habel, G. Leibiger, M. Abendroth, C. Himcinschi, J. Kortus, Raman spectroscopic characterization of epitaxially grown GaN on sapphire. J. Phys. D: Appl. Phys. 46, 285302 (2013)
M. Lee, S. Chang, Y. Wu, M. Tang, C. Lin, Mechanical bending cycles of hydrogenated amorphous silicon layer on plastic substrate by plasma-enhanced chemical vapor deposition for use in flexible displays. Jpn J. Appl. Phys. 48, 021301 (2009)
H. Luo, P. Song, A. Khan, J. Feng, J.J. Zang, X.P. Xiong, J.G. Lü, J.S. Lu, Effects of the metal-ceramic transition region on the mechanical properties and crack propagation behavior of an Al2O3-40 wt% TiO2 coating. Surf. Coat. Tech. 321, 200–212 (2017)
Funding
This work was supported by the National Natural Science Foundation of China (52002235, 52002236). It was also partially supported by Doctoral Scientific Research Startup Foundation of Shaanxi University of Science and Technology (No. 2019BJ-30).
Author information
Authors and Affiliations
Contributions
All authors contributed to the study conception and design. Material preparation, data collection, and analysis were performed by DA and SL. Experimental program planning and experimental guidance were performed by WL and GT. Software technical services were supported by DL, JZ, QY and DL. The manuscript was polished by AX. The first draft of the manuscript was written by DA, SL, and WL. All authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.
Corresponding authors
Ethics declarations
Conflict of interest
The authors have no relevant financial or non-financial interests to disclose.
Additional information
Publisher’s Note
Springer nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Ao, D., Liu, S., Liu, W. et al. Effect of stress on ferroelectric properties in flexible BiFe0.97Cr0.03O3/BiFe1−xMnxO3 composite thin films. J Mater Sci: Mater Electron 35, 247 (2024). https://doi.org/10.1007/s10854-024-12004-w
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s10854-024-12004-w