Abstract
β-FeSi2 is a potential, inexpensive and stable thermoelectric material for intermediate-temperature range thermoelectric power-generating devices applications. Due to their inherent adoption for converting n- and p-type by adding appropriate doping elements, β-FeSi2 materials have been intensively explored for several decades of thermoelectric research. However, its complex processing route and low figure-of-merit values limit its applications in TEGs. The present study attempts to develop a simple and effective processing method for synthesizing p- and n-type β-FeSi2 material for thermoelectric power generators (TEGs) and the synthesized materials characterized for their thermoelectric and mechanical compatibility. The synthesized p- and n-type β-FeSi2 material has resulted in enhanced thermoelectric performance with an excellent mechanical strength of ≃10 GPa, using a suitable doping approach. The synthesized semiconducting β-FeSi2 material possesses p- and n-type conduction and imparted substantial enhancement in mechanical strength, which affirms the materials’ integrity in thermoelectric devices.
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Acknowledgements
The Director, CSIR-National Physical Laboratory, India is greatly acknowledged for the motivation, encouragement, and experimental facility support. The technical assistance of Mr. R. Shyam and Dr. Naval K. Upadhyay is greatly acknowledged. Ms. Priyanka Sangwan acknowledged the CSIR-HRDG, New Delhi and AcSIR, Ghaziabad, India, for the Senior Research Fellowship (SRF).
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PS: Investigation, Methodology, Writing—Original Draft. SM: Conceptualization, Methodology, Writing—Review & Editing, Investigation.
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Sangwan, P., Muthiah, S. Enhanced power factor and mechanically robust thermoelectric β-FeSi2 material synthesis by a suitable doping approach. J Mater Sci: Mater Electron 34, 1879 (2023). https://doi.org/10.1007/s10854-023-11283-z
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DOI: https://doi.org/10.1007/s10854-023-11283-z