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Impact of Sb/Ag co-doping on SnO2’s optical, transport, and crystallographic properties for optoelectronic devices

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Abstract

Over the years, scientists were consistently searching for novel oxide materials that can be employed in optoelectronic and spintronic devices. In this work, we have explored the structural, optical and transport features of Sn0.94Ag0.06−ySbyO2 (0 ≤ y ≤ 0.06) compounds for their potential use in optoelectronics devices. The measurement and analyses of the X-ray diffraction patterns confirmed that these samples are crystallised in a single phase of tetragonal rutile structure, though the changes in the lattice parameters were observed to be nominal. Raman spectroscopy analysis of these samples has further supported the formation of tetragonal rutile phase of SnO2 and successful incorporation of Ag/Sb ions in SnO2. According to the SEM microstructural study, the sample morphology is homogeneous, and the average grain size falls somewhere in the 50–60 nm range. The elemental color mapping that is performed by energy dispersive spectroscopy reveals that all the elements are distributed consistently across the prepared samples. According to XPS analysis, Sn resided in the multiple valence states, whereas Sb and Ag was in +3 and +1 state respectively. The optical properties measurements such as absorbance and transmittance using a UV–Vis spectrophotometer reveal the optical band gap narrowing while enhancing the Sb/Ag co-doping concentrations. Further, it was observed that the increase in the amount of Sb co-doping concentration causes a rise in the transmittance value from 86 to 88%. According to the Hall effect investigation, all Ag/Sb co-doped SnO2 samples exhibits p-type behaviour, and overall carrier concentrations was found to decrease with increases of co-doping percentage.

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Acknowledgements

SKS acknowledge the financial support from UGC-DAE CSR through a Collaborative Research Scheme (CRS) Project Number CRS/2021-22/01/364. This work was partially carried out using the facilities of UGC-DAE CSR. KK Singha would like to express special thanks to Dr. Vasant G. Sathe (Centre-Director) and Mr. Ajay K. Rathore (Scientific Officer -F) for helping out to do Raman Spectroscopy at UGC-DAE-CSR Indore. Further, KK Singha would like to express special thanks to Dr. Mukul Gupta (Scientist-G), Mr. Layanta Behera (Scientific Assistant-E) for helping out to do XRD measurement at UGC-DAE-CSR Indore. KK Singha acknowledges the help from CIF, IIT Guwahati for SEM, and XPS measurements.

Funding

This work was supported by UGC-DAE Consortium for Scientific Research, University Grants Commission (Grant number  CRS/2021-22/01/364).

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Authors and Affiliations

  1. Department of Physics, Central Institute of Technology Kokrajhar, Kokrajhar, 783370, India

    K. K. Singha & S. K. Srivastava

  2. Department of Chemistry, Central Institute of Technology Kokrajhar, Kokrajhar, 783370, India

    A. Mondal

  3. UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore, 452001, India

    M. Gupta, V. G. Sathe & D. Kumar

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KKS: Investigation, methodology, formal analysis, writing manuscript; AM: investigation; MG: resources, review and editing; VGS: resources, review and editing; DK: resources, review and editing; SKS: conceptualization, methodology, visualization, writing—review & editing, supervision.

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Singha, K.K., Mondal, A., Gupta, M. et al. Impact of Sb/Ag co-doping on SnO2’s optical, transport, and crystallographic properties for optoelectronic devices. J Mater Sci: Mater Electron 34, 1421 (2023). https://doi.org/10.1007/s10854-023-10854-4

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