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Temperature-dependent electrical properties of schottky barrier diodes based on carbon nanotube arrays

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Abstract

In this study, the current conduction mechanisms (CCMs) of the carbon nanotube Schottky barrier diodes (CNT SBDs) based on carbon nanotube arrays on an insulating quartz substrate are investigated using the forward current-voltage-temperature (I-V-T) measurements over a wide temperature range of 60 to 360 K. Anomalous temperature dependence of both the values of ideality factors (n) and Schottky barrier heights (SBHs) extracted from thermionic emission (TE) theory and Chueng’s method were observed, as the SBHs increase whereas the ideality factors decrease with the increasing temperature from 60 to 360 K. The anomalous temperature dependence could be explained by the Gaussian distribution of the Schottky barrier heights. Furthermore, the contributions of generation-recombination, tunneling, and leakage current are all considered for the forward current of the CNT SBDs. The fitting results indicate that in the temperature range of 60 to 360 K, the main CCMs below 180 K are tunneling and leakage, while the main CCMs are dominated by TE and leakage above 300 K. In this work, the dependence of the electrical properties of CNT SBDs on temperature is reported in detail, which is helpful to better understand the electrical properties of CNT SBDs and improve their performance.

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Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

This work was funded by the Research and Development Projects in Key Fields of Guangdong Province under Grant No. 2020B010171001, as well as the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.

Funding

The Research and Development Projects in Key Fields of Guangdong Province, 2020B010171001, Hudong Chang, the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, E2YS024001, Hudong Chang

Author information

Authors and Affiliations

  1. High-Frequency High-Voltage Devices and ICs R&D Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China

    Zhi Huang, Zhen Zhang, Hudong Chang, Yakuan Chang & Bing Sun

  2. School of Microelectronics, University of Chinese Academy of Sciences, Beijing, 101408, China

    Zhi Huang, Zhen Zhang, Hudong Chang, Yakuan Chang & Bing Sun

  3. Research Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China

    Honggang Liu

  4. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China

    Hudong Chang & Bing Sun

Authors
  1. Zhi Huang
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  2. Zhen Zhang
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  3. Hudong Chang
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  4. Yakuan Chang
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  5. Honggang Liu
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Contributions

All authors contributed to the study conception and design. Device preparation, data collection and analysis were performed by Zhi Huang, Zhen Zhang, Hudong Chang, and Yakuan Chang. The first draft of the manuscript was written by Zhi Huang and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Bing Sun.

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Huang, Z., Zhang, Z., Chang, H. et al. Temperature-dependent electrical properties of schottky barrier diodes based on carbon nanotube arrays. J Mater Sci: Mater Electron 34, 1046 (2023). https://doi.org/10.1007/s10854-023-10447-1

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