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Correction to: J Mater Sci: Mater Electron (2022) 33:17842–17854 https://doi.org/10.1007/s10854-022-08648-1
An article of this title was published in the Journal of Material Science: Material in Electronics (2022) 33: 17842–17854. Unfortunately, an error occurred in the calculation of % change in the relevant parameter mentioned in Table 4 and the related explanation in the text. The corrections are incorporated in Table 4 and should be read as presented below:
The followings are the instances influenced due to correction in Table 4 and must be read as follows:
Page 17842 (abstract), line (14–17): Should be read as “The synergetic confluence of improved power factor and low thermal conductivity in Mg1.98Si0.3Sn0.65Ge0.05 resulted in the highest \(ZT\) value of 0.08 at ~ 523 K, which is ~ 300% higher than the \(ZT\) value (~ 0.02) of the parent Mg2Si0.35Sn0.65 alloy”.
Page 17851, line (14–18): Should be read as “At room temperature, \({k}_{L}\) of Ge doped alloys are nearly ~ 61% lower than that of the parent alloy, suggesting that Ge substitution increases phonon scattering due to the complexity of band structure”.
Page 17851, line (36–41): Should be read as “Overall, we observe that \(ZT\) increases by ~ 300% and ~ 290% in Mg1.98Si0.30Sn0.65Ge0.05 and Mg1.96Si0.30Sn0.65Ge0.05, respectively, compared to Mg2Si0.35Sn0.65 at 523 K; this further suggests that Ge substitution reduces the bipolar effect, significantly improving the thermoelectric figure-of-merit”.
Page 17851, line (58–62): Should be read as “Furthermore, the increase of \(ZT\) by ~ 167% Mg1.96Si0.30Sn0.65Ge0.05 (this study) than Mg2Si [61] may be attributed to the reduction of bipolar effect by Ge substitution, which facilitates reduction in thermal conductivity, as discussed earlier”.
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Rao, S.P., Sarkar, P., Singh, A. et al. Correction to: Study of high temperature electrical conductivity and thermoelectric performance in Mg2-δSi0.35-xSn0.65Gex (δ = 0–0.04 and x = 0, 0.05) intermetallic alloys. J Mater Sci: Mater Electron 33, 27169–27170 (2022). https://doi.org/10.1007/s10854-022-09386-0
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DOI: https://doi.org/10.1007/s10854-022-09386-0