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Electrical characteristics of Al2O3/p-Si heterojunction diode and effects of radiation on the electrical properties of this diode

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Abstract

The temperature dependence of the electrical parameters of the Au/α-Al2O3/p-Si/Al heterojunction diode and the variation of these parameters with radiation were investigated. It has been determined that the lnI–V curves of the diode have non-linear plots and this is due to the inhomogeneity in the potential barrier. The ideality factor (n), barrier height (Φb) and series resistance (Rs) values of the diode were calculated depending on the temperature. It was determined that n and Rs values decrease and Φb values increase with the increase in temperature. The voltage coefficients and standard deviation values are calculated using the [(1/n) − 1] − 1/2kT and Φb − 1/2kT graphs of heterojunction diode. The value of Richardson constant was calculated as A* = 7.64 A/K2 cm2 using conventional Richardson plot of ln(I0/T2) against 1/T. In addition, the effects of different X-ray irradiation doses on the I–V characteristics of Au/Al2O3/p-Si/Al heterojunction were examined.

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Data availability

The datasets generated during and/or analyzed during the current study are not publicly available due [reason(s) why data are not publıc] but are available from the corresponding author on reasonable request.].

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Funding

This study was financed from Hakkari University Scientific Research Projects budget numbered “FM22BAP2.”

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Authors and Affiliations

  1. Department of Electric and Energy, Çölemerik V.H.S, Hakkari University, Hakkari, 30000, Turkey

    Ali Rıza Deniz

  2. Department of Electric and Energy, Technical Science V.H.S, Ardahan University, Ardahan, 75000, Turkey

    Zakir Çaldıran

  3. Depertment of Opticians, Malatya Turgut Ozal University, Malatya, 44700, Turkey

    Lütfi Bilal Taşyürek

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  1. Ali Rıza Deniz
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  2. Zakir Çaldıran
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  3. Lütfi Bilal Taşyürek
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Contributions

In this study, fabrication process of the diode, performing electrical measurements, and analyzing these measurements were carried out by Assistance Prof. Dr. ARD, Assistance Prof. Dr. ZÇ and Dr. LBT.

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Correspondence to Ali Rıza Deniz.

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Deniz, A.R., Çaldıran, Z. & Taşyürek, L.B. Electrical characteristics of Al2O3/p-Si heterojunction diode and effects of radiation on the electrical properties of this diode. J Mater Sci: Mater Electron 33, 26954–26965 (2022). https://doi.org/10.1007/s10854-022-09359-3

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