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Effect of electron radiation on electrical parameters of Zn/n-Si/Au–Sb and Zn/ZnO/n-Si/Au–Sb diodes

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Abstract

In this study, RF-magnetron sputtered ZnO thin film as an interlayer was used to improve radiation tolerance of the Schottky diodes. The structural and optical measurements showed that the ZnO thin films have hexagonal crystal structure with preferential c-axis orientation, 20.39 nm grain sizes and 3.15 eV bandgap. The electrical parameters such as ideality factor, barrier height and series resistance of Zn/n-Si/Au–Sb and Zn/ZnO/n-Si/Au–Sb diodes were calculated before and after electron radiation at 25, 50 and 75 gray doses. Deviation values of the parameters showed that the ZnO as an interlayer caused to improved radiation tolerance of the diodes.

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Acknowledgments

We thank to Yılmaz Şahin from Atatürk University for help in exposing electron irradiation measurements.

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Authors and Affiliations

  1. Department of Physics, Faculty of Sciences, University of Atatürk, 25240, Erzurum, Turkey

    M. A. Salari, M. Sağlam & B. Güzeldir

  2. Department of Electricity and Energy, Technical Scientific Vocational School, Ardahan University, 75000, Ardahan, Turkey

    A. Baltakesmez

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  1. M. A. Salari
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  2. M. Sağlam
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  4. B. Güzeldir
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Correspondence to B. Güzeldir.

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Salari, M.A., Sağlam, M., Baltakesmez, A. et al. Effect of electron radiation on electrical parameters of Zn/n-Si/Au–Sb and Zn/ZnO/n-Si/Au–Sb diodes. J Radioanal Nucl Chem 319, 667–678 (2019). https://doi.org/10.1007/s10967-018-06401-9

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