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Detrimental angle range between c axis of Sn crystal and electron flow for the electromigration reliability of ball grid array devices

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Abstract

With the rapid development of miniaturization and high integration for electronic components, the increasing current density and Joule heat put a great challenge on the electromigration (EM) reliability. In this study, four kinds of surface finishes were adopted in ball grid array (BGA) structure in order to compare their EM reliability performance. Interfacial microstructure evolution during EM test was observed by scanning electron microscopy equipped with energy-dispersive spectroscopy. When surface finish of hot-air solder leveling and organic solderability preservative were adopted, two IMCs, i.e., Cu3Sn and Cu6Sn5 were formed at the Cu/SnAgCu interface. When electroless nickel immersion gold and electroless nickel electroless palladium immersion gold were used, only (Cu, Ni)6Sn5 was formed. Moreover, crack was found on the cathode with Ni-free surface finish. However, it was also noticed that not all the cathodes with Ni-free surface finish would fail even under the same test condition. In order to find out the hidden factors influencing the EM reliability, electron back-scattered diffraction analysis was conducted. According to the statistics, the grain orientation of Sn crystal played a decisive role on the EM reliability, especially when the transgranular migration took a major part along the diffusion path. Detrimental angle range between c axis of Sn crystal and electron flow was calculated as smaller than 45°. It was because the angles influenced the migration rate of atoms, further determined the initiation of cracks. This study reveals a hidden dominant factor of EM reliability, which also gives insights for analyzing EM reliability and improving overall reliability of BGA devices.

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Funding

This work was financially supported by Guangdong Basic and Applied Basic Research Foundation (Grant No.2019A1515110771), Guangdong Basic and Applied Basic Research Foundation (Grant No.2022A1515011485) and SIAT Innovation Program for Excellent Young Researchers.

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Authors and Affiliations

  1. Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China

    Xiao Li, Li-Yin Gao & Zhi-Quan Liu

  2. Hisilicon Technologies, Co Ltd, Shenzhen, 518129, China

    Jun-Lei Tao & Shu-Jun Dai

Authors
  1. Xiao Li
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  2. Li-Yin Gao
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  3. Jun-Lei Tao
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  4. Shu-Jun Dai
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Contributions

All authors contributed to the study conception and design. Material preparation was performed by JLT and SJD. Data collection and analysis were performed by XL and LYG. The first draft of the manuscript was written by LYG and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Li-Yin Gao or Zhi-Quan Liu.

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Li, X., Gao, LY., Tao, JL. et al. Detrimental angle range between c axis of Sn crystal and electron flow for the electromigration reliability of ball grid array devices. J Mater Sci: Mater Electron 33, 17877–17887 (2022). https://doi.org/10.1007/s10854-022-08651-6

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  • DOI: https://doi.org/10.1007/s10854-022-08651-6

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