Abstract
In this work, a strategy was demonstrated to reduce the sintering temperature of Mg2SiO4 ceramics while keeping the macrostructure unchanged, through an appropriate amount of low melting point Ge substitution for B-site Si. A series of Mg2Si1−xGexO4 (x = 0.1–0.4) ceramics were prepared by a solid-state reaction method. Influences of Ge substitution on the sintering behavior, crystal structure, and microwave dielectric properties were studied. By comparison, the Ge-substituted samples could be effectively sintered at relatively lower sintering temperatures (~ 1370 °C), which is more than 100 °C lower than the nominal Mg2SiO4. In addition, the optimum microwave dielectric performance was achieved in the sample with x = 0.4, with the relative density ~ 97%, the relative dielectric constant (εr) of 7.2, the quality factor (Q × f) of 75,794 GHz, and the temperature coefficient of the resonance frequency (τf) of − 41.2 ppm/°C. This compositional regulation provides a paradigm for improving the sintering characteristics of silicate.
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Acknowledgments
Chunchun Li gratefully acknowledges the financial support from the Natural Science Foundation of China (No. 62061011) and Guangxi Zhuang Autonomous Region (No. 2018GXNSFAA281253, 2019GXNSFGA245006) and the high-level innovation team and outstanding scholar program of Guangxi institutes. LB Zhang and HR Mei thank CZ Yin from Huazhong University of science and technology for his guidance on data analysis of the Rietveld refinements.
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All authors contributed to the study conception and design. Material preparation, data collection and analysis were performed by LZ and HM. The first draft of the manuscript was written by LZ, ZR, and CL. LS helped revise the previous manuscript and responded to the comments. All authors read and approved the final manuscript.
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Zhang, L., Mei, H., Rao, Z. et al. Lowered sintering temperature and modulated microwave dielectric properties in Mg2SiO4 forsterite via Ge substitution. J Mater Sci: Mater Electron 33, 10183–10193 (2022). https://doi.org/10.1007/s10854-022-08008-z
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DOI: https://doi.org/10.1007/s10854-022-08008-z