Abstract
In this work, the effects of Ti doping on the microstructure, dielectric, and magnetic properties of GdMn(1−x)TixO3 (x = 0.00–0.15) ceramic samples synthesized using a solid-state reaction were investigated. All the experimental samples formed a single-phase structure, and no structural transformation occurred within the experimental doping range; however, Ti doping caused lattice shrinkage. Ti doping reduced the grain size, and the microstructure of the synthesized samples appeared more compact in scanning electron microscopy images. The lattice distortion of GdMn(1−x)TixO3 caused by Ti substitution at the Mn sites resulted in changes in the Raman vibration modes. X-ray photoelectron spectroscopy results showed that the valence state transition of the Ti and Mn ions occurred and the concentration of Ti4+, Mn3+ ions and oxygen vacancies changed due to the charge compensation induced by Ti doping. Ti doping had a significant influence on the size and concentration of cation vacancies in the GdMn(1−x)TixO3 samples. Appropriate Ti doping was shown to reduce the dielectric loss, improve the frequency stability of the dielectric constant, and significantly affect the long-range ordering of Gd3+ magnetic moments and clearly reduce magnetization.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China [grant numbers 11775192, 11975211 and 12005194] and the Natural Science Foundation of Henan Province [Grant Numbers 212300410092, 212102210135, 20A430033, 212102210485].
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Wang, M., Dai, H., Li, T. et al. The evolution of structure and properties in GdMn(1−x)TixO3 ceramics. J Mater Sci: Mater Electron 32, 27348–27361 (2021). https://doi.org/10.1007/s10854-021-07106-8
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DOI: https://doi.org/10.1007/s10854-021-07106-8