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The current–voltage characteristics of V2O5/n-Si Schottky diodes formed with different metals

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Abstract

In this work, we reported the effect of different metal contacts on performance of metal–oxide–semiconductor (MOS)-structured Schottky diodes formed with the vanadium pentoxide thin film (V2O5) interfacial layer. V2O5 thin films were deposited by radio frequency (RF) magnetron sputtering on n-type silicon (n-Si) and Corning glass (CG) substrates at room temperature. Then, the obtained films were annealed at 300 °C and 500 °C. The effects of annealing temperature on physical properties of the films were investigated by X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, atomic force microscopy, UV–Vis spectroscopy, and photoluminescence. The MOS-structured Al/V2O5/n-Si, Ti/V2O5/n-Si and Au/V2O5/n-Si Schottky barrier diodes (SBDs) performance was analyzed with I–V measurements at room temperature. The Schottky diodes were compared with each other according to three methods (Classic, Norde and Cheung). The experimental results indicated that the Schottky diode produced with Al contact had better performance than the others.

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Acknowledgements

This work was supported by SBB- Strategy and Budget Presidency (TR) under project number of 2016K121220.

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  1. Photonics Application and Research Center, Gazi University, 06500, Ankara, Turkey

    Meltem Donmez Kaya, Buse Comert Sertel, Nihan Akin Sonmez, Mehmet Cakmak & Suleyman Ozcelik

  2. Department of Photonics, Gazi University, 06500, Ankara, Turkey

    Nihan Akin Sonmez, Mehmet Cakmak & Suleyman Ozcelik

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  1. Meltem Donmez Kaya
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Kaya, M.D., Sertel, B.C., Sonmez, N.A. et al. The current–voltage characteristics of V2O5/n-Si Schottky diodes formed with different metals. J Mater Sci: Mater Electron 32, 20284–20294 (2021). https://doi.org/10.1007/s10854-021-06534-w

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