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Illumination and voltage effects on the forward and reverse bias current–voltage (I-V) characteristics in In/In2S3/p-Si photodiodes

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Abstract

The illumination and voltage effects on the I-V measurements of the fabricated In/In2S3/p-Si photodiode were investigated in dark and under various illumination intensities (20–100 mW/cm2) between ± 2 V. Two linear regions in the forward-bias ln(I)-V plots were observed. The value of diode ideality factor (n) had an increasing trend with increasing illumination intensity while the barrier height (ΦBo) had a decreasing trend due to the increase of photocurrent. The photodiode properties were also investigated, and the value of linear-dynamic value range (LDR) was found to be 20.56 dB. The photoresponse (Iph/Idark), the photoresponsivity (R), and specific detectivity (D*) of the photodiode were calculated as a function of the illumination. The open-circuit voltage (Voc) and short-current (Isc) were found to be 0.36 V and 2.87 mA under 100 mW.cm−2 illumination intensity, respectively. The possible conduction mechanisms (CMs) were investigated using the forward ln(I)-V and reverse ln(I)-V0.5 plots. The energy-dependent surface states (Nss) profile was extracted from the positive I-V data by considering voltage-dependent barrier height (BH) and ideality factor (n) in dark and illumination at 100 mW/cm2.

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Authors and Affiliations

  1. Department of Electronics and Automation, OSTIM Technical University, 06374, Ankara, Turkey

    Esra Yükseltürk

  2. Department of Electrical and Electronics Engineering, Atilim University, 06836, Ankara, Turkey

    Ozge Surucu

  3. Department of Physics, Tekirdag Namik Kemal University, 59030, Tekirdag, Turkey

    Makbule Terlemezoglu

  4. Department of Physics, Middle East Technical University, 06800, Ankara, Turkey

    Makbule Terlemezoglu & Mehmet Parlak

  5. Center for Solar Energy Research and Applications (GÜNAM), Middle East Technical University, 06800, Ankara, Turkey

    Makbule Terlemezoglu & Mehmet Parlak

  6. Department of Physics, Faculty of Sciences, Gazi University, 06560, Ankara, Turkey

    Şemsettin Altındal

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  1. Esra Yükseltürk
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Correspondence to Mehmet Parlak.

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Yükseltürk, E., Surucu, O., Terlemezoglu, M. et al. Illumination and voltage effects on the forward and reverse bias current–voltage (I-V) characteristics in In/In2S3/p-Si photodiodes. J Mater Sci: Mater Electron 32, 21825–21836 (2021). https://doi.org/10.1007/s10854-021-06378-4

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