Abstract
The effect of surface sulfidation of Si on electronic transport of heterojunction diodes based on the p-type Cu2ZnSnS4 (CZTS) and n-type Si is investigated. The temperature-dependent current–voltage (I–V) characteristics of CZTS/Si diodes with and without sulfide treatment are measured in the temperature range of −30 ~ 90 °C. The temperature dependence of forward bias I–V characteristics can be explained on the basis of the thermionic emission theory. Compared with the CZTS/Si diode without sulfide treatment, the CZTS/Si diode with sulfide treatment exhibits a better rectifying behavior. The enhanced device performance is mainly the result of the formation of Si–S bonds that serve to reduce the interfacial potential fluctuations. In order to obtain a greater understanding of the improved rectifying I–V characteristics, the photoresponse measurement is performed. The increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.
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The authors acknowledge the support of the Ministry of Science and Technology, Taiwan (Contract No. 103-2112-M-018-003-MY3) in the form of Grants.
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Lin, YJ., Ruan, CH., Chu, YJ. et al. Correlation between interface modification and rectifying behavior of p-type Cu2ZnSnS4/n-type Si diodes. Appl. Phys. A 121, 103–108 (2015). https://doi.org/10.1007/s00339-015-9390-y
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DOI: https://doi.org/10.1007/s00339-015-9390-y