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Improving the electrical and mechanical performances of embedded capacitance materials by introducing tungsten disulfide nanoflakes into the dielectric layer

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Abstract

Embedded capacitance materials have attracted tremendous attention because of their prominent merits in comparison with discrete capacitors. However, the currently used embedded capacitance materials are suffering technical problems such as limited electrical and mechanical performances, which can hardly adapt to the rapid developments of next-generation electronics. Here, we present an effective approach for improving the electrical and mechanical performances by adding two-dimensional (2D) transition metal dichalcogenides (TMDC) tungsten disulfide (WS2) nanoflakes into the barium titanate/epoxy resin (BT/ER) system. The anti-sedimentation capability, viscosity and film-formation capability of pastes synthesized by different kinds and amounts of fillers were investigated. The introduction of semiconducting WS2 nanoflakes can work as inner micro-electrodes and is beneficial to the dispersion of BT particles in ER matrix. The dielectric constant and the peel strength can be improved to 22.54 at 1 kHz and 9.4 N/mm, respectively. The restricted dielectric loss below 0.07 at 1 kHz can be accounted by the lower conductivity of WS2 nanoflakes. The introduction of WS2 nanoflakes into BT/ER system may provide new avenues for fabrication of advanced embedded capacitance materials. Further performance improvements may be achieved by optimizing the variety, structure and chemical properties of TMDCs.

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Acknowledgements

This work is supported by the National Natural Science Foundation of China (Grant No. 51807083 and No. 51875269), the Natural Science Foundation of Jiangsu Province (Grant No. BK20170585), Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD).

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Authors and Affiliations

  1. Department of Electronic Packaging Technology, School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang, Jiangsu, 212003, People’s Republic of China

    Fengwei Wang, Ruohan Xia, Xinxin Li, Jinfang Qin, Hui Shao, Gang Jian, Rui Liu & Fengjiang Wang

  2. CAS Key Laboratory of Soft Matter Chemistry, Department of Polymer Science and Engineering, University of Science and Technology of China, Hefei, Anhui, 230026, People’s Republic of China

    Huarong Liu

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  1. Fengwei Wang
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  2. Ruohan Xia
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  3. Xinxin Li
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Correspondence to Fengwei Wang.

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Wang, F., Xia, R., Li, X. et al. Improving the electrical and mechanical performances of embedded capacitance materials by introducing tungsten disulfide nanoflakes into the dielectric layer. J Mater Sci: Mater Electron 31, 7889–7897 (2020). https://doi.org/10.1007/s10854-020-03327-5

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