Abstract
ZnO nanorods (NRs) have been successfully fabricated on p-type boron-doped diamond (BDD) substrate by hydrothermal method. The current–voltage characteristics of the ZnO NRs/BDD heterojunction show a typical rectifying behavior with extremely low reverse leakage current and high rectification ratio of around 370 at bias of 3 V. Exposed to ultraviolet (UV) illumination with a wavelength of 365 nm, the time dependent photoresponse manifests high sensitivity and consistent transients with a rise time of 4.9 s and decay time of 6.4 s. Circulating on/off measurement under UV detection demonstrates the excellent stability and repeatability for as-fabricated ZnO NRs/BDD heterojunction. Furthermore, the mechanism for UV detection on the ZnO NRs/BDD heterojunction has also been discussed.
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Acknowledgements
The work was supported by National Science Foundation of China (61574051), Natural Science Foundation of Heilongjiang Province of China (E2015002), the Fundamental Research Funds for the Central Universities (HIT. NSRIF. 2014003), and the Open Project Program of Key Laboratory for Photonic and Electric Bandgap Materials, Ministry of Education, Harbin Normal University, China.
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Wan, Y., Gao, S., Li, L. et al. Efficient UV photodetector based on heterojunction of n-ZnO nanorods/p-diamond film. J Mater Sci: Mater Electron 28, 11172–11177 (2017). https://doi.org/10.1007/s10854-017-6904-8
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DOI: https://doi.org/10.1007/s10854-017-6904-8