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Fabrication and characterization of ZnO film based UV photodetector

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Abstract

ZnO films were deposited on Al2O3 substrates by metalorganic chemical vapor deposition (MOCVD) at temperatures of 400, 450 and 500 °C. The photoconductivity of the films has been analyzed for ultraviolet detector application. The changes in photoresponse and current–voltage (I–V) are correlated with the deposition temperatures and microcrystalline structures. The study suggested that the photoresponse originating from bulk- and surface-related processes. For a film deposited at 400 °C, a 1 ms fast rising time and a 5 ms fall time were observed. The photoresponsivity is ∼24 A/W with a 3 V bias.

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Authors and Affiliations

  1. Department of Physics, Tonghua Teachers’ College, Tonghua, 134002, China

    C. Y. Liu

  2. Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), 519-1399 Aoba, Aramaki, Aoba-ku, Sendai, 980-0845, Japan

    C. Y. Liu, N. T. Binh, K. Wakatsuki & Y. Segawa

  3. Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen, 361005, P.R. China

    B. P. Zhang

  4. State Key Laboratory of Applied Optics, Changchun Institute of Optics and Fine Mechanics and Physics, CAS, Changchun, 130022, China

    Z. W. Lu

  5. Department of Physics, Fisk University, Nashville, TN, 37208, USA

    R. Mu

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  1. C. Y. Liu
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Correspondence to C. Y. Liu.

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Liu, C.Y., Zhang, B.P., Lu, Z.W. et al. Fabrication and characterization of ZnO film based UV photodetector. J Mater Sci: Mater Electron 20, 197–201 (2009). https://doi.org/10.1007/s10854-008-9698-x

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  • DOI: https://doi.org/10.1007/s10854-008-9698-x

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