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Nb-doped BaTiO3–(Na1/4Bi3/4)(Mg1/4Ti3/4)O3 ceramics with X9R high-temperature stable dielectric properties

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Abstract

Nb2O5 doped 0.8BaTiO3–0.2(Na1/4Bi3/4)(Mg1/4Ti3/4)O3 (0.8BT–0.2NBMT) polycrystalline ceramics were prepared by solid state reaction method. 0.8BT–0.2NBMT samples were observed to possess two dielectric peaks, which were attributed to the formation of core–shell structure (Huang et al. in J Eur Ceram Soc 36:533–540, 2015). Longer sintering induced uniform distributions of the additives. The introduction of Nb2O5 into 0.8BT–0.2NBMT could obviously bring about the improvement of the dielectric temperature stability, the degradation of the dielectric loss at room temperature and the decrease of the sintering temperature. The 0.8BT–0.2NBMT ceramics doped with 2.0 at% Nb2O5 could satisfy the temperature range of the X9R (−55 to 200 °C, △C/C25°C = ±15% or less) characteristics, with a moderate dielectric constant of 1130, low dielectric loss of 0.7%, low sintering temperature of 1050 °C and insulation resistivity of 5 × 1012 Ω cm at room temperature, which might be promising for practical use in multilayer ceramic capacitors. The inhomogeneous distribution and the existence of the secondary phases were responsible for this excellent dielectric temperature characteristic. The complex impedance analysis was introduced to elaborate the conduction mechanism.

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Acknowledgements

This work was supported by Natural Science Foundation of China (No. 51372191), International Science and Technology Cooperation Program of China (2011DFA52680), The Ministry of Sciences and Technology of China through National Basic Research Program of China (973 Program 2015CB654601), The Fundamental Research Funds for the Central Universities (WUT:152401002 and 152410002).

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Authors and Affiliations

  1. School of Material Science and Engineering, Wuhan University of Technology, Wuhan, 430070, People’s Republic of China

    Xuechen Huang, Wenqin Zhang, Juan Xie, Qi Xu, Lin Zhang, Hua Hao, Hanxing Liu & Minghe Cao

  2. School of Material and Chemical Engineering, Chuzhou University, Chuzhou, 239000, People’s Republic of China

    Xuechen Huang

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  1. Xuechen Huang
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  2. Wenqin Zhang
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  3. Juan Xie
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Correspondence to Hanxing Liu.

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Huang, X., Zhang, W., Xie, J. et al. Nb-doped BaTiO3–(Na1/4Bi3/4)(Mg1/4Ti3/4)O3 ceramics with X9R high-temperature stable dielectric properties. J Mater Sci: Mater Electron 28, 4204–4210 (2017). https://doi.org/10.1007/s10854-016-6042-8

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