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MOVPE growth of in situ Ga catalyzed AlGaAs nanowires on sapphire substrate

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Abstract

Growth of single crystalline AlGaAs nanostructures was carried out on highly lattice mismatched sapphire substrate by metal organic vapor phase epitaxy technique without using any external catalyst. In situ deposited Ga droplets were used as catalyst for the growth of AlGaAs nanostructures. The effects of growth temperature and V/III ratio were studied in detail. The growth of nanowires required a careful optimization of the growth conditions. The formation of well-faceted nanostructures and nanowires with hexagonal cross-section were found to be influenced by the growth parameters. The growth of nanostructures proceeds via VS growth mechanism after the consumption of initial Ga droplets depending on the growth conditions.

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Acknowledgments

The authors would like to thank the characterization division of SSPL for FESEM, XRD, micro-PL and micro-Raman measurements. The authors also wish to thank Director, Solid State Physics Laboratory, for his constant support, encouragement and permission to publish the present work.

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Authors and Affiliations

  1. Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi, 110054, India

    Rajesh K. Bag, J. Lohani & R. Tyagi

  2. Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India

    D. K. Pandya & R. Singh

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  1. Rajesh K. Bag
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  2. J. Lohani
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Correspondence to Rajesh K. Bag.

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Bag, R.K., Lohani, J., Tyagi, R. et al. MOVPE growth of in situ Ga catalyzed AlGaAs nanowires on sapphire substrate. J Mater Sci: Mater Electron 27, 2335–2341 (2016). https://doi.org/10.1007/s10854-015-4030-z

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  • DOI: https://doi.org/10.1007/s10854-015-4030-z

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