Abstract
Four AlN nanowire-like structures were simultaneously grown directly without a buffer layer on four substrates-sapphire, quartz, Si(111), and 6H-SiC-via a mixed-source hydride vapor phase epitaxy (HVPE) method using a mixed source (Al+Ga) containing a small quantity of Ga at 1150 °C for 2 h. Deposition was carried out using a simplified reactor designed in series without any separation between the source and the growth zones. AlN nanostructures with hexagonal crystal structures were grown successfully and directly on thin, pre-grown AlN nucleation areas on the quartz substrates. Furthermore, AlN nanostructures were grown on the sapphire substrate without a buffer layer and on pre-grown epilayers on the Si (111) and the 6H-SiC substrates, respectively. The characteristics of the AlN nanowire-like structures grown on the four substrates were investigated using energy-dispersive X-ray spectrometry and field-emission scanning electron microscopy.
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This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2017R1D1A3B03035999).
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Kim, K.H., Lee, G.S., Ahn, H.S. et al. Comparison of AIN Nanowire-Like Structures Grown by using Mixed-Source Hydride Vapor Phase Epitaxy Method. J. Korean Phys. Soc. 75, 242–247 (2019). https://doi.org/10.3938/jkps.75.242
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DOI: https://doi.org/10.3938/jkps.75.242