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Influence of post-annealing time on properties of ZnO: (Li, N) thin films prepared by ion beam enhanced deposition method

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Abstract

Lithium and nitrogen dual-doped ZnO films [ZnO: (Li, N)] with Li concentrations of 4 at.% were grown on glass substrates by ion beam enhanced deposition (IBED) and then annealing in Ar flow. The influence of post-annealing time on their structural, optical and electrical properties was studied. The co-doped ZnO: (Li, N) films have a ZnO wurtzite structure. Electrical property studies indicated that the ZnO: (Li, N) film annealed at 500 °C in Ar showed p-type conductivity with a lowest resistivity of 10.83 Ω cm. The transmittance of ZnO: (Li, N) film is above 80 % in visible range and the band gap of ZnO: (Li, N) film have a evident narrowing after p-type doping.

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Authors and Affiliations

  1. Functional Materials Laboratory, Changzhou University, Changzhou, 213016, Jiangsu, China

    Jiansheng Xie, Qi-fei Lu & Qiang Chen

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  1. Jiansheng Xie
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  2. Qi-fei Lu
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  3. Qiang Chen
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Correspondence to Jiansheng Xie.

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Xie, J., Lu, Qf. & Chen, Q. Influence of post-annealing time on properties of ZnO: (Li, N) thin films prepared by ion beam enhanced deposition method. J Mater Sci: Mater Electron 26, 2669–2673 (2015). https://doi.org/10.1007/s10854-014-2466-1

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  • DOI: https://doi.org/10.1007/s10854-014-2466-1

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