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Effects of Nitrogen Partial Pressure Ratio and Anneal Temperature on the Properties of Al–N Co-Doped ZnO Thin Films

  • Topical Collection: 18th International Conference on II-VI Compounds
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Abstract

The authors report the conversion of conduction type from n-type to p-type in the Al–N co-doped ZnO thin films by using thermal annealing treatment under argon atmosphere. The samples were deposited on fused silica by radio frequency magnetron sputtering. X-ray diffraction measurements showed that ZnO thin films have (002)-preferred orientation and the lattice constant decreases with the increase of nitrogen partial pressure. The average optical transmittance of these films is over 80%. The hole density is around 1.58 × 1017 cm−3 with an annealing temperature of 700°C. After exposing the samples in air for 1 year, the conduction type remains p-type with only a slight decrease of hole density, which indicates that the p-type ZnO with Al–N co-dopants has good electrical stability.

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Author notes

  1. Y.F. Wang and L.D. Yu have contributed equally to his work.

Authors and Affiliations

  1. Department of Physics, Harbin Institute of Technology (HIT), Harbin, 150080, China

    Y. F. Wang, L. D. Yu, H. Y. Chen, X. J. Wang, Z. G. Liu & Y. Sui

  2. State Key Laboratory of Urban Water Resource and Environment, Department of Physics, Harbin Institute of Technology, Harbin, China

    B. S. Li

  3. Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, Harbin Normal University, Harbin, China

    B. S. Li

  4. Department of Electrical Engineering, The City College of New York, New York, 10031, USA

    A. Shen

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  1. Y. F. Wang
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  2. L. D. Yu
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  3. H. Y. Chen
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  4. B. S. Li
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  5. X. J. Wang
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  6. Z. G. Liu
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  7. Y. Sui
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  8. A. Shen
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Correspondence to B. S. Li.

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Wang, Y.F., Yu, L.D., Chen, H.Y. et al. Effects of Nitrogen Partial Pressure Ratio and Anneal Temperature on the Properties of Al–N Co-Doped ZnO Thin Films. J. Electron. Mater. 47, 4351–4355 (2018). https://doi.org/10.1007/s11664-018-6294-6

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  • DOI: https://doi.org/10.1007/s11664-018-6294-6

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