Skip to main content
SpringerLink
Log in

Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

High-k gate dielectric HfO2 thin films have been deposited on Si and quartz substrates by radio frequency magnetron sputtering. The structural characteristics, surface morphology, and optical properties of the HfO2/Si gate stacks at various post-annealing temperatures were examined by X-ray diffraction (XRD), atomic force microscopy (AFM), fourier transform infrared spectroscopy (FTIR), ultraviolet–visible spectroscopy (UV–Vis spectroscopy), and spectroscopic ellipsometry (SE). XRD measurement indicates that the 80 W-deposited HfO2 films demonstrate a polycrystalline structure. AFM measurements illustrate that the root mean square of the HfO2 thin films demonstrates an apparent increase with increasing the annealing temperature. Analysis from FTIR indicates that the Si–O–Si bonds vibration peak position shift toward lower wave numbers with increasing the annealing temperature. Combined with UV–Vis spectroscopy and SE measurements, it can be noted reduction in band gap with an increase in annealing temperature has been confirmed. Additionally, increase in refractive index (n) has been confirmed by SE.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8

Similar content being viewed by others

References

  1. G. He, L.D. Zhang, M. Liu, Appl. Phys. Lett. 95, 112905 (2009)

    Article  Google Scholar 

  2. G. He, G.W. Meng, L.D. Zhang, M. Liu, Appl. Phys. Lett. 91, 232910 (2007)

    Article  Google Scholar 

  3. G. He, B. Deng, H.S. Chen, X.S. Chen, J.G. Lv, Y.Q. Ma, Z.Q. Sun, APL. Mater. 1, 012104 (2013)

    Article  Google Scholar 

  4. G. He, Q. Fang, G.H. Li, J.P. Zhang, L.D. Zhang, Appl. Surf. Sci. 253, 8483 (2007)

    Google Scholar 

  5. H. Yu, J.J. Wang, S.C. Yan, T. Yu, Z.G. Zou, J. Photoch. Photobiol. A 275, 65 (2014)

    Article  Google Scholar 

  6. M.K. Kim, W.H. Kim, Lee, H. Kim, Thin Solid Films 542, 71 (2013)

    Article  Google Scholar 

  7. L.Q. Zhu, Y.H. Liu, H.L. Zhang, H. Xiao, L.Q. Guo, Appl. Surf. Sci. 288, 430 (2014)

    Google Scholar 

  8. L.F. Werner, R. Faccio, A. Juan, H. Pardo, B. Montenegro, A.W. Mombru, Appl. Surf. Sci. 290, 180 (2014)

    Google Scholar 

  9. M. Taguchi, T. Nakane, A. Matsushita, Y. Sakka, T. Uchikoshi, T. Funazukuri, T. Naka, J. Supercrit. Fluid. 85, 57 (2014)

    Article  Google Scholar 

  10. G. He, L.D. Zhang, G.H. Li, M. Liu, L.Q. Zhu, S.S. Pan, Appl. Phys. Lett. 86, 232901 (2005)

    Article  Google Scholar 

  11. R. Jiang, E.Q. Xie, Z.F. Wang, J. Mat. Sci. 42, 7343 (2007)

    Article  Google Scholar 

  12. L.P. Feng, N. Li, H. Tian, Z.T. Liu, J. Mat. Sci. 49, 1875 (2014)

    Article  Google Scholar 

  13. E. Levrau, K. Devloo-Casier, J. Dendooven, K.F. Ludwig, P. Verdonck, J. Meersschaut, M.R. Baklanov, C. Detavernier, Langmuir 29, 12284 (2013)

    Article  Google Scholar 

  14. P. Verdonck, A. Delabie, J. Swerts, L. Farrell, M.R. Baklanov, H. Tielens, E. Van Besien, T. Witters, L. Nyns, S. Van Elshocht, Microelectron. Eng. 106, 81 (2013)

    Article  Google Scholar 

  15. G. He, B. Deng, Z.Q. Sun, X.S. Chen, Y.M. Liu, L.D. Zhang, Crit. Rev. Solid State Mater. Sci. 38, 235 (2013)

    Google Scholar 

  16. S. Godavarthi, Q.T. Le, P. Verdoncka, S. Mardani, K. Vanstreels, E. Van Besien, M.R. Baklanov, Microelectron. Eng. 107, 134 (2013)

    Article  Google Scholar 

  17. M.S. Kim, Y.D. Ko, M. Yun, J.H. Hong, M.C. Jeong, J.M. Myoung, I. Yun, Mater. Sci. Eng. B 123, 20 (2005)

    Article  Google Scholar 

  18. J. Varghese, T. Joseph, M.T. Sebastian, AIP Conf. Proc. 1372, 193 (2010)

    Google Scholar 

  19. T. Kawahara, M. Yamamuka, T. Makita, J. Naka, A. Yuuki, N. Mikami, K. Ono, Jpn. J. Appl. Phys. 33, 5129 (1994)

    Article  Google Scholar 

  20. J. Zuo, G.G. Nie, X. Gu, Y. Zong, L. Sun, C.J. Lin, Mater. Lett. 61, 2632 (2007)

    Article  Google Scholar 

  21. V. Kapaklis, P. Poulopoulous, V. Karoutsos, T. Manouras, C. Politis, Thin Solid Films 510, 138 (2006)

    Article  Google Scholar 

  22. J. Zuo, Appl. Surf. Sci. 256, 7096 (2010)

    Google Scholar 

  23. Y.C. Liu, S.K. Tung, J.H. Hsieh, J. Cryst. Growth 287, 105 (2006)

    Article  Google Scholar 

  24. M.F. Al-Kuhaili, S.M.A. Durrani, I.A. Bakhtiari, M.A. Dastageer, M.B. Mekki, Mater. Chem. Phys. 126, 515 (2011)

    Google Scholar 

  25. G. He, L.D. Zhang, J. Mater. Sci. Technol. 23, 433 (2007)

    Article  Google Scholar 

  26. M. Modreanu, J. Sancho-Parramon, O. Durand, B. Servet, M. Stchakovsky, C. Eypert, C. Naudin, A. Knowles, F. Bridou, M.F. Ravet, Appl. Sur. Sci. 253, 328 (2006)

    Article  Google Scholar 

  27. G. He, Q. Fang, M. Liu, L.Q. Zhu, L.D. Zhang, J. Cryst. Growth 268, 155 (2004)

    Article  Google Scholar 

  28. J. Aarik, H. Mandar, M. Kirm, Thin Solid Films 466, 41 (2004)

    Article  Google Scholar 

  29. A. Ramadoss, S.J. Kim, J. Alloys. Compd 544, 115 (2012)

    Article  Google Scholar 

  30. H. Kato, T. Nango, T. Miyagawa, T. Katagiri, K.S. Seol, Y. Ohki, J. Appl. Phys. 92, 1106 (2002)

    Article  Google Scholar 

  31. C.Y. Ma, W.J. Wang, J. Wang, C.Y. Miao, S.L. Li, Q.Y. Zhang, Thin Solid Films 545, 279 (2013)

    Article  Google Scholar 

  32. S. Prucnal, J.M. Sun, A. Nazarov, L.P. Tjagulskii, L.N. Osiyuk, R. Fedaruk, W. Skorupa, Appl. Phys. B. 88, 241 (2007)

    Article  Google Scholar 

  33. X. Liu, D. Li, Appl. Surf. Sci. 253, 2143 (2006)

    Google Scholar 

  34. M. Liu, Q. Fang, G. He, L. Li, L.Q. Zhu, G.H. Li, L.D. Zhang, Appl. Phys. Lett. 88, 192904 (2006)

    Article  Google Scholar 

  35. R. Hong, J. Huang, H. He, Z. Fan, J. Shao, Appl. Surf. Sci. 242, 346 (2005)

    Google Scholar 

Download references

Acknowledgments

The authors acknowledge the support from Anhui Provincial Natural Science Foundation (1208085MF99), National Key Project of Fundamental Research (2013CB632705), Provincial Natural Science Foundation of Anhui Higher Education Institution of China (KJ2012A023), Key Project of Chinese Ministry of Education (212082), and Outstanding Young Scientific Foundation of Anhui University (KJJQ1103) and “211 project” of Anhui University.

Author information

Authors and Affiliations

  1. School of Physics and Materials Science, Anhui University, Hefei, 230601, People’s Republic of China

    B. Deng, G. He, X. F. Chen, J. W. Zhang & Z. Q. Sun

  2. National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai, 200083, People’s Republic of China

    G. He & X. S. Chen

  3. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People’s Republic of China

    M. Liu

  4. Department of Physics and Electronic Engineering, Hefei Normal University, Hefei, 230061, People’s Republic of China

    J. G. Lv

Authors
  1. B. Deng
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. G. He
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. X. S. Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. X. F. Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. J. W. Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. M. Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. J. G. Lv
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Z. Q. Sun
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to G. He.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Deng, B., He, G., Chen, X.S. et al. Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics. J Mater Sci: Mater Electron 25, 4163–4169 (2014). https://doi.org/10.1007/s10854-014-2144-3

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-014-2144-3

Keywords

Search

Navigation