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Al doping effect on microstructure, electrical properties, dielectric characteristics, and aging behaviors of ZPCCY-based varistors

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Abstract

The Al doping effect on the microstructure, electrical properties, dielectric characteristics, and aging behaviors of ZPCCY-based varistors was investigated in the range of 0.0–0.1 mol%. The breakdown electric field in the E-J characteristics decreased in a wide range from 4,921 to 475 V/cm with increasing amounts of Al2O3. The nonlinear properties were improved by increasing amounts of Al2O3 up to 0.005 mol%, whereas the further additions caused it to decrease. The highest nonlinear coefficient (α = 45.2) was obtained when Al2O3 concentration is 0.005 mol%. The Al2O3 acted as a donor due to the increase of electron concentration in the small range of 0.0–0.1 mol%. On the other hand, an appropriate addition of Al2O3 in the range of 0.001–0.005 mol% was found to significantly improve the electrical stability against DC accelerated aging stress.

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  1. Department of Electrical Engineering, Dongeui University, Busan, 614-714, South Korea

    Choon-W. Nahm

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Nahm, CW. Al doping effect on microstructure, electrical properties, dielectric characteristics, and aging behaviors of ZPCCY-based varistors. J Mater Sci: Mater Electron 20, 718–726 (2009). https://doi.org/10.1007/s10854-008-9793-z

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  • DOI: https://doi.org/10.1007/s10854-008-9793-z

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