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Major Effects on Non-ohmic Properties and Aging Stress Behavior of ZPCCD Semiconducting Varistors with Er2O3 Doping Changes

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Abstract

A stress behavior of non-ohmic properties for ZPCCD (ZnO–Pr1.83–CoO–Cr2O3–Dy2O3) varistors was investigated for different amounts of the doped Er2O3. With the amount of the doped Er2O3 increased, the density of the sintered pellet decreased from 5.56 to 5.43 g/cm3, and the average grain size decreased from 16.4 to 6.8 μm. With the amount of the doped Er2O3 increased, the breakdown field increased from 1676 to 3939 V/cm, and the non-ohmic coefficient exhibited the fluctuation between 41.4 and 68.1. The varistors doped with 0.25 mol% Er2O3 of exhibited the strongest electrical stability; variation rates for the breakdown field and for the non-ohmic coefficient were 0.1 and − 8.3%, respectively, after application of a strong stress (0.95 EB/150 °C/24 h).

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Acknowledgements

This Work was support by Dong-eui University Foundation Grant (2017).

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  1. Semiconductor Ceramics Laboratory, Department of Electrical Engineering, Dongeui University, Busan, 47340, Korea

    Choon-W. Nahm

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  1. Choon-W. Nahm
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Correspondence to Choon-W. Nahm.

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Nahm, CW. Major Effects on Non-ohmic Properties and Aging Stress Behavior of ZPCCD Semiconducting Varistors with Er2O3 Doping Changes. Trans. Electr. Electron. Mater. 19, 330–336 (2018). https://doi.org/10.1007/s42341-018-0060-6

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