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Formation of insulating oxygen-containing layer on the silicon wafer surface using low-temperature hydrogenation

  • O. Zinchuk
  • A. Saad
  • N. Drozdov
  • A. Fedotov
  • S. Kobeleva
  • A. MazanikEmail author
  • A. Patryn
  • V. Pilipenko
  • A. Pushkarchuk
Article

Abstract

This experimental work demonstrated that the low-temperature (25 °C) hydrogen ion-beam treatment has led to the formation of an oxygen-containing nanolayer at the surface of standard commercial p- and n-type Czochralski-grown (Cz) Si wafers. The measurements of I–V and C–V characteristics have shown that this layer has insulating properties, its resistivity ≈5 × 1012 Ω cm. It was suggested that the formation of such an insulating layer might be related to the highly distorted region under the wafer surface due to the incorporation of high dose of hydrogen and its low diffusivity into the bulk at low-temperatures.

Keywords

Silicon Wafer Wafer Surface Hydrogenation Temperature Silicon Lead Grow Silicon Oxide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

This work was supported by research program “Nanomaterials and Nanotechnologies” of Republic of Belarus and the VISBY Program of the Swedish Institute.

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Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  • O. Zinchuk
    • 1
  • A. Saad
    • 2
  • N. Drozdov
    • 1
  • A. Fedotov
    • 1
  • S. Kobeleva
    • 3
  • A. Mazanik
    • 1
    Email author
  • A. Patryn
    • 4
  • V. Pilipenko
    • 5
  • A. Pushkarchuk
    • 6
  1. 1.Belarusian State UniversityMinskBelarus
  2. 2.Applied Science DepartmentAl-Balqa Applied UniversitySaltJordan
  3. 3.Moscow Institute of Steels and AlloysMoscowRussia
  4. 4.Technical University of KozsalinKozsalinPoland
  5. 5.STC “Belmicrosystems”MinskBelarus
  6. 6.Institute of Physical–Organic Chemistry NASBMinskBelarus

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