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Physical, electrical, and optical properties of SF-PECVD-grown hydrogenated microcrystalline silicon with growth surface electrical bias

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Abstract

Characterization results on hydrogenated microcrystalline silicon (μc-Si:H) thin films grown in a Saddle Field (SF) PECVD system are presented. The microcrystalline content of the films is controlled by the application of a positive electrical bias to the film growth surface. The results of photoluminescence, atomic force microscopy, infrared-absorption, and electrical conductivity studies are presented. The results correlate to the changing microcrystalline content of the films in the same way as when microcrystalline content is influenced through growth parameters such as hydrogen dilution in other CVD techniques.

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Notes

  1. The crystallinity is calculated for films on either SnO2:F, f-SiO2, or CG7059 substrates, whereas the H-content is calculated for films on crystalline wafers.

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Acknowledgements

The authors recognize the support of the Natural Science and Engineering Research Council of Canada, ARISE Technologies and Materials and Manufacturing Ontario.

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  1. Erik V. Johnson

    Present address: LPICM, École Polytechnique, Palaiseau Cedex, 91128, France

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada, M5S 3G4

    Erik V. Johnson, Sjoerd Hoogland, Ethan Klem, Nazir Kherani & Stefan Zukotynski

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  1. Erik V. Johnson
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  2. Sjoerd Hoogland
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  3. Ethan Klem
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Correspondence to Stefan Zukotynski.

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Johnson, E.V., Hoogland, S., Klem, E. et al. Physical, electrical, and optical properties of SF-PECVD-grown hydrogenated microcrystalline silicon with growth surface electrical bias. J Mater Sci: Mater Electron 17, 789–799 (2006). https://doi.org/10.1007/s10854-006-0025-0

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  • DOI: https://doi.org/10.1007/s10854-006-0025-0

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