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Effect of different dopants on the structural and physical properties of In2S3 thin films: a review

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Abstract

Indium sulfide (In2S3) is a fundamental material for optoelectronic and photovoltaic applications and a promising candidate for many technological applications because of its chemical stability, wide band gap energy, and photoconductive behavior. Indium sulfide films have been doped with various substances to enhance the high resistivity that is typically present in as-deposited In2S3 thin films. It depends on the value of the impurity concentration as a dopant, the structural, electrical, and optical characteristics of In2S3 thin films, such as crystal structure, crystallite size, morphology, surface roughness, band gap, dc conductance, resistivity, and transmittance characteristics, are influenced. The opto-electrical properties of In2S3 thin films can be modified by doping of different lanthanide or transition metals. The effects of various impurities incorporated in the physical properties of In2S3 are discussed and reviewed.

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Acknowledgements

We thank the laboratory co-workers in Azad University.

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Authors and Affiliations

  1. Plasma Physic Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran

    Mohammed Khalaf Salman

  2. Department of Physics, West Tehran Branch, Islamic Azad University, Tehran, Iran

    Somayeh Asgary

  3. Department of Converging Sciences, Sciences and Research Branch, Islamic Azad University, Tehran, Iran

    Said Tehrani-Nasab

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  1. Mohammed Khalaf Salman
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Khalaf Salman, M., Asgary, S. & Tehrani-Nasab, S. Effect of different dopants on the structural and physical properties of In2S3 thin films: a review. J Mater Sci 58, 12143–12157 (2023). https://doi.org/10.1007/s10853-023-08777-w

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