Abstract
In this paper, the epitaxial hexagonal LuFeO3 (h-LuFeO3) thin films with c-axis-oriented single phase, smooth surface were grown on YSZ (111) substrates by pulsed laser deposition method. Furthermore, a structural distortion of increased lattice constant of c is found in the epitaxial h-LuFeO3 thin films. Moreover, the epitaxial h-LuFeO3 thin films show room-temperature ferromagnetism. The coercive field and remnant magnetization of the epitaxial h-LuFeO3 thin film decrease with the increase in the test temperature from 50 to 300 K. The study would be of benefit to the room-temperature single-phase multiferroic materials.
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This work was supported by the National Natural Science Foundation of China (Nos. 61574121, 51572233, 11372266).
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Zhang, X., Song, H., Tan, C. et al. Epitaxial growth and magnetic properties of h-LuFeO3 thin films. J Mater Sci 52, 13879–13885 (2017). https://doi.org/10.1007/s10853-017-1469-8
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DOI: https://doi.org/10.1007/s10853-017-1469-8