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Thermoelectric properties of p-type semiconductors copper chromium disulfide CuCrS2+x

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Abstract

A series of bulk samples CuCrS2+x (x = 0, 0.01, 0.02, 0.06, 0.10) were prepared by combining mechanical alloying and spark plasma sintering. The effect of excessive sulfur content on the phase structure, microstructure, and thermoelectric and optical properties was investigated. The excessive sulfur initially entered into the lattice sites and then into the lattice interstices. A direct band gap semiconductor for CuCrS2 material with an optical band gap of about 2.48 eV was proved. An improved electrical conductivity 2980 S m−1 at 673 K reached along with an inversely varied Seebeck coefficient as increasing x value, which showed a maximum power factor of 104 μ W m−1 K−2 at 673 K for CuCrS2.01 sample. In addition to the low thermal conductivity between 0.48 and 1.02 W m−1 K−1 in the whole temperature range, a peak ZT of 0.15 was achieved at 673 K for CuCrS2.01 bulk sample, which was 36 % higher than that (0.11) of the CuCrS2.00.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant No. 51272023), and High-Tech 973 Program of China (Grant No. 2013CB632503). We also appreciate the help provided by Prof. J.-F. Li’s laboratory in Tsinghua University for part TE property measurements.

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Authors and Affiliations

  1. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China

    Cheng-Gong Han, Bo-Ping Zhang, Zhen-Hua Ge, Li-Juan Zhang & Yao-Chun Liu

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  1. Cheng-Gong Han
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  2. Bo-Ping Zhang
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  3. Zhen-Hua Ge
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  4. Li-Juan Zhang
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  5. Yao-Chun Liu
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Correspondence to Bo-Ping Zhang.

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Han, CG., Zhang, BP., Ge, ZH. et al. Thermoelectric properties of p-type semiconductors copper chromium disulfide CuCrS2+x . J Mater Sci 48, 4081–4087 (2013). https://doi.org/10.1007/s10853-013-7220-1

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