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Three-dimensional observation of defects in nitrogen-doped 6H-SiC crystals using a laser scanning confocal microscope

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Abstract

Different defective structures of nitrogen-doped 6H-SiC single crystals were examined using a combination of laser scanning confocal microscopy (LSCM), scanning electron microscope (SEM) and KOH–K2CO3 etching. The form, depth and size of the defects in etched silicon carbide (SiC) crystals were observed by LSCM. Using these 3D LSCM images, defective structures varying in the growth direction were observed from a side view for the first time. To study the size, depth and form of defect etch pits in detail, we observed the defect etch pits configuration in some volumes through taking 3D LSCM pictures. Information on defects obtained using this approach will be very helpful for investigation of MP and SD formation mechanism in conducting SiC substrates, as well as the observation of polytype stability in nitrogen-doped SiC crystals.

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Acknowledgements

This study was financially supported by the Xi’an Applied Materials Innovation Fund (Grant No. XA-AM-201013), the Foundation of Excellent Doctor Dissertation of Xi’an University of Technology (Grant No. 105-211009), and the National Natural Science Foundation of PR China (Grant No. 51177134).

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Authors and Affiliations

  1. Department of Electronic Engineering, Xi’an University of Technology, Xi’an, 710048, People’s Republic of China

    Shenghuang Lin, Zhiming Chen, Sujuan Liu, Ying Yang, Xianfeng Feng, Yintu Ba, Mingchao Yang & Chen Yang

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  1. Shenghuang Lin
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  2. Zhiming Chen
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  4. Ying Yang
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Correspondence to Shenghuang Lin.

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Lin, S., Chen, Z., Liu, S. et al. Three-dimensional observation of defects in nitrogen-doped 6H-SiC crystals using a laser scanning confocal microscope. J Mater Sci 47, 3429–3434 (2012). https://doi.org/10.1007/s10853-011-6190-4

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