Abstract
The characteristics and growth behaviors of alumina dielectric layer formed by anodic oxidation were investigated. The aluminum oxide layer anodized at 400 V was predominantly amorphous alumina, but at the applied potentials more than 500 V, amorphous and crystalline γ-alumina were existed in anodic oxide layer and the ratio of γ-alumina increased with the increasing applied potential. During the heat treatment at 600∘C or higher temperature, amorphous alumina layer was transformed into the crystalline γ-alumina. The phase transition of anodic amorphous alumina into crystalline depends on anodic applied potentials and heat-treatment temperatures.
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Oh, HJ., Lee, JH., Ahn, HJ. et al. Effects of potential and heat treatment on phase transition of alumina dielectric layer. J Electroceram 17, 369–373 (2006). https://doi.org/10.1007/s10832-006-9009-y
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DOI: https://doi.org/10.1007/s10832-006-9009-y