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The influence of titanium doping on the electric properties of amorphous alumina films prepared by sol–gel technology

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Abstract

The influence of titanium doping on the electric properties of amorphous alumina (Al2O3) films prepared by sol–gel technology was investigated. EDX mapping analysis indicates that the titanium cations are uniformly distributed in the film as Al2−xTixOy. The XPS analysis reveals that the titanium exists in the form of TiO2. The breakdown strength of the doped film can be much enhanced by the titanium doping. The dielectric strength of undoped Al2O3 films is 3.4 MV/cm, while the breakdown strength of the 10 % Ti-doped Al2O3 films is 5.3 MV/cm. Compared with the undoped Al2O3 films, the soft breakdown of Ti-doped Al2O3 films is gradually suppressed with the increasing of the titanium doping amount. Especially, there is hardly any soft breakdown observed for 10 % Ti-doped Al2O3 films.

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Acknowledgments

This work is supported by the Ministry of Science and Technology of China through 973-project (Grant Number 2015CB654601), International Science and Technology Cooperation Program of China (Grant Number 2013DFR50470) and National Science Foundation of China (Grant Number 51272177).

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Authors and Affiliations

  1. Functional Materials Research Laboratory, Tongji University, 4800 Caoan Highway, Shanghai, 201804, China

    Manwen Yao, Ruihua Xiao, Yong Peng, Jianwen Chen, Baofu Hu & Xi Yao

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  1. Manwen Yao
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  2. Ruihua Xiao
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  3. Yong Peng
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  4. Jianwen Chen
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  5. Baofu Hu
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Correspondence to Ruihua Xiao.

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Yao, M., Xiao, R., Peng, Y. et al. The influence of titanium doping on the electric properties of amorphous alumina films prepared by sol–gel technology. J Sol-Gel Sci Technol 74, 39–44 (2015). https://doi.org/10.1007/s10971-014-3568-1

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  • DOI: https://doi.org/10.1007/s10971-014-3568-1

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