Abstract
Equations are proposed for quasi-chemical reactions leading to the formation of intrinsic and impurity defects and defect complexes in Cl-doped cadmium telluride crystals during annealing in cadmium vapor at different temperatures. The equilibrium constants for the formation of (Cl +Te V 2−Cd )− defect complexes and Te 2+Cd antisite defects are calculated. An analytical expression is derived for the cadmium partial pressure corresponding to a type conversion. The conditions are established for producing n- and p-type CdTe〈 Cl〉 crystals with controlled carrier concentration.
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Translated from Neorganicheskie Materialy, Vol. 41, No. 6, 2005, pp. 656–661.
Original Russian Text Copyright © 2005 by Freik, Pysklynets, Mezhylovska.
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Freik, D.M., Pysklynets, U.M. & Mezhylovska, L.I. Modeling of Point Defects in Cl-Doped CdTe Crystals Annealed in Cd Vapor. Inorg Mater 41, 565–569 (2005). https://doi.org/10.1007/s10789-005-0170-5
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DOI: https://doi.org/10.1007/s10789-005-0170-5