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Effect of Intrinsic and Extrinsic Defects on the Structural, Thermal, and Electrical Properties in p-Type CZ-Si Wafers with Different Carrier Concentrations

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Abstract

Last century, there has been a growing interest in detecting defects in semiconductors, aiming to improve product quality to decrease production costs. Silicon manufacturing is carried out using different methods and procedures. It is crucial to consider quality control in all steps since dislocations, protrusive hillocks, and boron-oxygen complexes, among others, can be produced during the machining process, influencing the final product quality. Optical and electron microscopies are common tools to visualize defects in materials. However, these methods are time-consuming, inaccurate, and expensive. The objective of this work was to propose photothermal techniques as methodology and metrology to detect defects accurately through the knowledge of thermal properties, as these are determined by crystalline structure quality involving defects. Complementary techniques such as X-ray diffraction, FTIR spectroscopy, and the Hall effect established a correlation between the thermal, electrical, and structural properties of p-type Si samples with different carrier concentrations. Local variations in the carrier distribution detected using photocarrier radiometry found recombination by localized electronic defects. The absorption coefficient of B–O, Si–O–Si, and H–C–H bonds were obtained to calculate the concentration of BO-related defects, oxygen, and carbon. Carrier lifetime changes due to scattering processes were computed using the Hall effect, which confirmed structural variations. X-ray diffraction elucidated the effect of doping (boron) concentration on the crystalline quality of Si. Boron inclusions introduced dislocations because of smaller atom sizes than Si. Local variations in thermal diffusivity were detected using photoacoustics, phonon-dislocation scattering was responsible for the changes in this thermal property. The heat capacity, thermal conductivity, and diffusivity decreased owing to the crystalline quality and carrier concentration. Heat transport governed by phonons is extrinsically dependent on carrier concentration since it determines the lattice state. It was set up the photothermal measurements as a low-cost control method in order to improve step by step the quality of modern Si wafers.

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Acknowledgements

Harol D. Martinez-Hernandez and Porfirio E. Martinez-Munoz wish to thank the Consejo Nacional de Ciencia y Tecnología (CONACYT-México) for the financial support for their studies of master’s degree.

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Authors and Affiliations

  1. Posgrado en Ciencia e Ingeniería de Materiales, Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Campus Juriquilla, Querétaro, 76230, Mexico

    Harol D. Martinez-Hernandez & Porfirio E. Martinez-Munoz

  2. Cuerpo Académico de Tecnologías de la Información y Comunicación Aplicada (TICA), Universidad Politécnica de Querétaro, El Marqués, Querétaro, 76240, Mexico

    Cristian F. Ramirez-Gutierrez

  3. Departamento de Nanotecnología, Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Campus Juriquilla, Querétaro, 76230, Mexico

    Eduardo U. Martinez-Ascencio, Beatriz M. Millan-Malo & Mario E. Rodriguez-Garcia

Authors
  1. Harol D. Martinez-Hernandez
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  2. Porfirio E. Martinez-Munoz
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  3. Cristian F. Ramirez-Gutierrez
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  6. Mario E. Rodriguez-Garcia
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Contributions

HD contributed to conceptualization, methodology, formal analysis, investigation, writing of the original draft, and writing, reviewing, & editing of the manuscript. PE did photothermal measurements and he also contributed to supervision and conceptualization. CF contributed to reviewing, & editing the manuscript, he also built the photocarrier radiometry image. EU contributed to the Hall effect measurements and analysis. B did the DRX measurements and analysis. ME contributed to conceptualization, methodology, formal analysis, investigation, writing of the original draft, and writing, reviewing, & editing of the manuscript. All authors reviewed the manuscript.

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Correspondence to Harol D. Martinez-Hernandez.

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Martinez-Hernandez, H.D., Martinez-Munoz, P.E., Ramirez-Gutierrez, C.F. et al. Effect of Intrinsic and Extrinsic Defects on the Structural, Thermal, and Electrical Properties in p-Type CZ-Si Wafers with Different Carrier Concentrations. Int J Thermophys 43, 181 (2022). https://doi.org/10.1007/s10765-022-03110-0

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