Abstract
Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900 K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900 K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined.
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Proceedings of ICT/ECT Joint Conference 2012, July 9–12, 2012, Aalborg, Denmark.
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Stranz, A., Kähler, J., Waag, A. et al. Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K. J. Electron. Mater. 42, 2381–2387 (2013). https://doi.org/10.1007/s11664-013-2508-0
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DOI: https://doi.org/10.1007/s11664-013-2508-0