Abstract
In this paper, an equivalent imperfect interface model of PN homojunction/ heterojunction of piezoelectric semiconductor for the multi-field coupled wave propagation is proposed firstly. PN junction is a special structure formed by the contact of two different types of doped semiconductors, which has been used extensively in semiconductor devices. Due to the gradient distribution of the electric potential and carrier concentration in PN junction of finite thickness, the reflection and the transmission will arise when the coupled waves propagate through PN junction. The effects of the PN junction on the wave propagation will be much more complicated by the accurate estimation. An equivalent imperfect interface model without thickness but with seven interface parameters is established to simulate the effects of PN junction which largely reduces the calculation cost. The numerical examples are provided and compared with the state transfer matrix method and the piecewise homogenization method. Energy flux of the reflected and transmitted waves are estimated, and the energy conservation is checked to verify reliability of the numerical results.
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08 November 2023
A Correction to this paper has been published: https://doi.org/10.1007/s00707-023-03770-5
References
Xu, S., Qin, Y., Xu, C., Wei, Y., Yang, R., Wang, Z.: Self-powered nanowire devices. Nat. Nanotechnol. 5, 366–373 (2010)
Zhao, Z., Pu, X., Han, C., Du, C., Li, L., Jiang, C., Hu, W., Wang, Z.: Piezotronic effect in polarity-controlled GaN nanowires. ACS Nano 9(8), 8578–8583 (2015)
Sheng, S.L.: Semiconductor Physical Electronics. Springer, New York (2006)
Cheng, S., Han, S., Cao, Z., Xu, C., Fang, X., Wang, X.: Wearable and ultrasensitive strain sensor based on high-quality GaN PN junction microwire arrays. Small 16(16), e1907461 (2020)
Luo, Y., Cheng, R., Zhang, C., Chen, W., Yang, J.: Electromechanical fields near a circular PN junction between two piezoelectric semiconductors. Acta Mech. Solida Sin. 31(2), 127–140 (2018)
Ren, C., Wang, K., Wang, B.: Analysis of piezoelectric PN homojunction and heterojunction considering flexoelectric effect and strain gradient. J. Phys. D-Appl. Phys. 54(49), 495102 (2021)
Fang, K., Li, N., Li, P., Qian, Z., Kolesov, V., Kuznetsova, I.: Effects of an attached functionally graded layer on the electromechanical behaviors of piezoelectric semiconductor fibers. Appl. Math. Mech. English Ed. 43(9), 1367–1380 (2022)
Fan, S., Yang, W., Hu, Y.: Adjustment and control on the fundamental characteristics of a piezoelectric PN junction by mechanical-loading. Nano Energy 52, 416–421 (2018)
Fan, S., Chen, Z.: Effect of asymmetry mechanical loads on the potential barrier region of a piezoelectric PN junction. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 68(5), 1783–1790 (2021)
Jiao, F., Wei, P., Zhou, X., Zhou, Y.: The dispersion and attenuation of the multi-physical fields coupled waves in a piezoelectric semiconductor. Ultrasonics 92, 68–78 (2018)
Jiao, F., Wei, P., Zhou, Y., Zhou, X.: Wave propagation through a piezoelectric semiconductor slab sandwiched by two piezoelectric half-spaces. Eur. J. Mech. A. Solids 75, 70–81 (2019)
Tian, R., Nie, G., Liu, J., Pan, E., Wang, Y.: Love waves in a piezoelectric semiconductor thin film on an elastic dielectric half-space. Acta Mech. Solida Sin. 36(1), 45–54 (2022)
Xu, C.Y., Wei, P.J., Wei, Z.B., Guo, X.: Rayleigh wave in layered piezoelectric semiconductor with consideration of PN junction effects. Math. Mech. Solids, 1–17 (2022).
Xu, C., Wei, P., Wei, Z., Guo, X.: Shear horizontal wave in a piezoelectric semiconductor substrate covered with a metal layer with consideration of Schottky junction effects. Appl. Math. Model. 109, 509–518 (2022)
Waheed, A., Jahangir, A., Khan, A.: Study on velocity of waves through piezoelectric semiconductor rotating with fix angular velocity in context of fractional-order time derivative. Arch. Appl. Mech. 92(9), 2647–2664 (2022)
Guo, X., Wei, P.: Dispersion relations of in-plane elastic waves in nano-scale one dimensional piezoelectric semiconductor/piezoelectric dielectric hononic crystal with the consideration of interface effect. Appl. Math. Model. 96, 189–214 (2021)
Wei, Z., Wei, P., Xu, C., Guo, X.: Influences of piezoelectric positive-negative junction on the multi-field coupled waves propagation in the piezoelectric semiconductor. J. Acoust. Soc. Am. 152(3), 1883–1900 (2022)
Li, L., Wei, P., Guo, X.: Rayleigh wave on the half-space with a gradient piezoelectric layer and imperfect interface. Appl. Math. Model. 40(19–20), 8326–8337 (2016)
Guo, X., Li, L., Wei, P., Tang, Q.: Influences of mechanically and dielectrically imperfect interfaces on the reflection and transmission waves between two piezoelectric half spaces. Int. J. Solids Struct. 63, 184–205 (2015)
Guo, X., Ji, S., Liu, H., Ren, K.: Dispersion relations of elastic waves in three-dimensional cubical piezoelectric phononic crystal with initial stresses and mechanically and dielectrically imperfect interfaces. Appl. Math. Model. 69, 405–424 (2019)
Loukkal, A., Lematre, M., Bavencoffe, M., Lethiecq, M.: Modeling and numerical study of the influence of imperfect interface properties on the reflection coefficient for isotropic multilayered structures. Ultrasonics 103, 106099 (2020)
Barnes, T., Olson, K., Wolden, C.: On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide. Appl. Phys. Lett. 86(11), 112112 (2005)
Qin, G., Ma, S., Lu, C., Wang, G., Zhao, M.: Influence of electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics. Ceram. Int. 44(4), 4169–4175 (2018)
Veal, T.D., King, P.D.C., Hatfield, S.A., Bailey, L.R., McConville, C.F., Martel, B., Zúñiga-Pérez, J.: Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy. Appl. Phys. Lett. 93(20), 202108 (2008)
Acknowledgements
The work is supported by National Natural Science Foundation of China (No. 11872105, NO.12072022, NO.11911530176 and NO.12202039), Fundamental Research Funds for the Central Universities (FRF-TW-2018-005, FRF-BR-18-008B, FRF-TP-18-077A1).
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“The original online version of this article was revised: the figures 4 and 6 has been corrected” plus the same explanatory text of the problem as in the erratum/correction article.
Appendices
Appendix A
Appendix B
Appendix C
Appendix D
where \(s = I,R.\)
Appendix E
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Wei, Z., Wei, P., Xu, C. et al. Equivalent imperfect interface model of PN junction of piezoelectric semiconductor for the multi-field coupled waves propagation. Acta Mech 235, 73–92 (2024). https://doi.org/10.1007/s00707-023-03643-x
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DOI: https://doi.org/10.1007/s00707-023-03643-x