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Improved field emission properties of ZnO NRs using Al-doped and post oxygen annealing

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Abstract

In this paper, we synthesized Al doped ZnO (AZO) nanorods (NRs) and characterized their field emission properties. In addition, we considered the effect of post annealing process on the field emission characteristics of pure and doped ZnO NRs. Our results show that the field emission properties improve with the increased Al doping concentration in ZnO NRs. The field enhancement factor β is enhanced by ∼ 25% through 4% (weight ratio) Al doping. The field emission properties can be further improved by annealing in oxygen environment. Oxygen annealing modified the crystal structure of ZnO NRs and improves their field emission properties. Therefore, the 4 wt% Al doped sample with oxygen post annealing demonstrates the best field emission performance.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Babol Noshirvani University of Technology, Babol, Iran

    Bahram Azizollah Ganji & Marziyeh Advand

  2. Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran

    Mohammadreza Kolahdouz

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  1. Bahram Azizollah Ganji
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  2. Marziyeh Advand
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  3. Mohammadreza Kolahdouz
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Correspondence to Bahram Azizollah Ganji.

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Ganji, B.A., Advand, M. & Kolahdouz, M. Improved field emission properties of ZnO NRs using Al-doped and post oxygen annealing. Microsyst Technol 24, 2611–2616 (2018). https://doi.org/10.1007/s00542-018-3706-8

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  • DOI: https://doi.org/10.1007/s00542-018-3706-8

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