Abstract.
We analyzed the rapid heating properties of 50-nm-thick silicon films via 250-nm-thick SiO2 intermediate layers by heat diffusion from joule heating induced by electrical current flow in chromium strips. Numerical heat-flow simulation resulted in that the silicon films were heated to the melting point by a joule-heating intensity above 1 MW/cm2. A marked increase in electrical conductance associated with silicon melting was experimentally detected. Taper-shaped chromium strips detected the temperature gradient in the lateral direction caused by the spatial distribution of the joule-heating intensity. Crystallization occurred according to the temperature gradient. A 2–4-μm lateral crystalline grain growth was demonstrated for the silicon films.
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Received: 20 November 2001 / Accepted: 22 November 2001 / Published online: 20 March 2002
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Sameshima, T., Kaneko, Y. & Andoh, N. Rapid joule heating of metal films used to crystallize silicon films . Appl Phys A 74, 719–723 (2002). https://doi.org/10.1007/s003390101138
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DOI: https://doi.org/10.1007/s003390101138