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Optical gain of interdiffused GaInNAs/GaAs quantum wells

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Abstract.

A self-consistent model for the band structure and optical gain spectra in interdiffused GaxIn1-xN0.04As0.96/GaAs single quantum wells are studied theoretically using Fick’s Law and the Fermi Golden Rule. Due to quantum-well interdiffusion, the peak gain and its peak vary with the annealing time. Our results show that the interdiffusion technique can be used to tune the operation wavelength for multi-wavelength applications without degradation of device performance.

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Authors and Affiliations

  1. Photonics Research Center and Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, , , , , , HK

    M.C.Y. Chan, C. Surya & P.K.A. Wai

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  1. M.C.Y. Chan
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  2. C. Surya
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  3. P.K.A. Wai
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Additional information

Received: 18 April 2001 / Accepted: 19 September 2001 / Published online: 20 December 2001

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Chan, M., Surya, C. & Wai, P. Optical gain of interdiffused GaInNAs/GaAs quantum wells . Appl Phys A 75, 573–576 (2002). https://doi.org/10.1007/s003390101031

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  • DOI: https://doi.org/10.1007/s003390101031

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