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Electrical properties of amorphous Cu doped InSe thin films

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Abstract

In this study, we employed thermal evaporation under vacuum conditions to introduce copper dopants into amorphous InSe thin films. Our objective was to scrutinize the effects of varied copper doping concentrations on the structural, compositional, electrical, and photoelectrical properties of the films. Our observations indicated that copper doping did not induce discernible alterations in the amorphous morphology of the InSe films, yet it yielded notable enhancements in the material’s atomic stoichiometry. Notably, films subjected to both pristine conditions and 0.09 at. % copper doping exhibited extrinsic n-type conductivity behavior, while those doped with 0.42 at. % copper displayed a transition to p-type conductivity. Furthermore, our investigation encompassed electrical conductivity measurements conducted over a temperature range spanning from 100 to 320 K, elucidating the dominance of thermal excitation mechanisms at higher temperatures, and the prevalence of variable range hopping (VRH) processes at lower temperatures. The magnitude of copper dopants in the InSe matrix exerted discernible influence over impurity kinetics and VRH parameters, encompassing factors such as the degree of disorder, density of states proximate to the Fermi level, and average hopping distance. Additionally, our photoelectrical assessments unveiled that a nominal concentration of copper doping (0.09 at. %) yielded a remarkable augmentation of over 70% in the photoconductivity of the InSe films, underscoring its potential suitability for optoelectronic applications.

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The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

This work was funded by the Arab American University, Jenin, Palestine and by Istinye University, Istanbul, Turkey. The authors, therefore, acknowledge with thanks the Arab American and Istinye Universities for the technical and financial support.

Funding

This work was funded by Arab American University, Jenin, Palestine and by Istinye University, Istanbul, Turkey.

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Authors and Affiliations

  1. Department of Physics, Arab American University, Jenin, Palestine

    A. F. Qasrawi & Maryam Khalefa N. Abuarra

  2. Department of Electrical and Electronics Engineering, Istinye University, 34010, Istanbul, Turkey

    A. F. Qasrawi

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  1. A. F. Qasrawi
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Contributions

AFQ handled data analysis in all parts, article editing and reviewing, and carried out the modeling of variable range hopping. MKNA collected all experimental data, organized the results and shared in the analyses.

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Correspondence to A. F. Qasrawi.

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Qasrawi, A.F., Abuarra, M.K.N. Electrical properties of amorphous Cu doped InSe thin films. Appl. Phys. A 129, 664 (2023). https://doi.org/10.1007/s00339-023-06955-w

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