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Microstructure, electrical and optoelectronic characterizations of transparent conductive nanocrystalline \({\mathbf{In}}_{\mathbf{2}}{\mathbf{O}}_{\mathbf{3}}\):Sn thin films

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Abstract

In this study Sn doped \(\hbox {In}_{2}\hbox {O}_{3}\) (ITO) thin films were deposited on glass substrates by e-beam evaporation technique at different oxygen partial pressure and then were annealed in vacuum at \(400\,^\circ \hbox {C}\) for 1 h. The effects of oxygen partial pressure on the crystallite size, dislocation density, outer cut-off radius of dislocation, fraction of edge and screw dislocation types, the electrical resistivity, optical transmittance, refractive index, porosity and optical band gap energy were studied. The films deposited at an optimized oxygen partial pressure of \(1\times 10^{-4}\) mbar showed high transparency (88 %) over the visible wavelength region, low electrical resistivity of \(3.2\times 10^{-4}\,\Omega \,\hbox {cm}\) and the optical band gap of 3.63(3) eV. It is also observed that the best crystal quality (high crystallite size and low dislocation density) are obtained in partial pressure of \(1\times 10^{-4}\) mbar, indicating the oxygen partial pressure is a key factor in controlling the microstructure, electrical and optical properties of ITO films.

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Acknowledgments

The authors would like to thank the Iran Nanotechnology Initiative Council for their financial support.

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Authors and Affiliations

  1. Department of Physics, Faculty of Sciences, Shahrekord University, P.O. Box 115, Shahrekord, Iran

    Mohsen Ghasemi Varnamkhasti & V. Soleimanian

  2. Nanotechnology Research Center, Shahrekord University, 8818634141, Shahrekord, Iran

    Mohsen Ghasemi Varnamkhasti & V. Soleimanian

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  1. Mohsen Ghasemi Varnamkhasti
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Varnamkhasti, M.G., Soleimanian, V. Microstructure, electrical and optoelectronic characterizations of transparent conductive nanocrystalline \({\mathbf{In}}_{\mathbf{2}}{\mathbf{O}}_{\mathbf{3}}\):Sn thin films. J Mater Sci: Mater Electron 26, 3223–3230 (2015). https://doi.org/10.1007/s10854-015-2820-y

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  • DOI: https://doi.org/10.1007/s10854-015-2820-y

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