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Structural and electrical properties of TZO MOS capacitors

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Abstract

ZrTiO2 dielectric thin films were successfully deposited on p-Si(100) substrate using sol–gel spin coating technique. The rotational speed influenced structural, optical and dielectric properties of TZO films were studied thoroughly. A notable hoist in the packaging density and surface roughness of the TZO films were clearly observed in AFM images after annealing. The physical thickness and refractive index of the films increased significantly with respect to rotational speed. The dielectric constant of the proposed ZrTiO2 MOS devices was also increased. The interface quality at TZO/Si stacks was improved conspicuously in annealed TZO devices.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, PBR Visvodaya Institute of Technology and Science, Kavali, Andhra Pradesh, 524201, India

    Mohammad Hayath Rajvee

  2. Department of Physics, GITAM School of Science, GITAM (Deemed to Be) University, Visakhapatnam, 530045, India

    S. V. Jagadeesh Chandra

  3. Department of Electronics and Communication Engineering, Vignan Institute of Information Technology, Duvvada, Visakhapatnam, 530049, India

    B. Eswara Rao

  4. Department of Electronics and Communication Engineering, Lakireddy Bali Reddy College of Engineering, Mylavaram, 521230, India

    Y. S. V. Raman

  5. Department of Electronics and Communication Engineering, Andhra University College of Engineering (A), Andhra University, Visakhapatnam, 530003, India

    P. Rajesh Kumar

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  1. Mohammad Hayath Rajvee
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Correspondence to S. V. Jagadeesh Chandra.

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Rajvee, M.H., Chandra, S.V.J., Rao, B.E. et al. Structural and electrical properties of TZO MOS capacitors. Appl. Phys. A 128, 1121 (2022). https://doi.org/10.1007/s00339-022-06143-2

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