Abstract
Semiconductor materials, which are the aim of this study, are among the most recent advanced materials in the infrared and microwave domains. The reason for focusing on semiconducting elastic materials stems from their abundance in nature and also their numerous benefits in mechanical engineering and cotemporary physics. This work intends to provide a theoretical framework by considering the effects of thermal and electronic elastic deformation in a semiconductor medium during the exciting thermo-photovoltaic process. To this end, a modified photothermal model, in which the heat conduction is represented by the Moore–Gibson–Thompson (MGT) equation, is established by incorporating a relaxation parameter into the Green–Naghdi type III concept. The proposed model is used to investigate the interactions between plasma, thermal and elastic processes through a solid sphere of semiconductor material subject to a thermal shock in conjunction with an external magnetic field. The influence of thermal and carrier lifetime parameters on different physical properties of silicon material is graphically illustrated using theoretical simulated results by employing the Laplace technique.
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Abbreviations
- σij :
-
denote the components of stress field
- \(\varrho\) :
-
is material’s density
- u i :
-
are the displacement components
- F i :
-
are the components of body forces and i, j, k = 1, 2, 3
- eij :
-
represent the components of the strain tensor
- ekk = e:
-
is the cubical dilatation
- dnij = dni δij :
-
are difference in deformation potential of the conduction and valence bands
- Cijkl :
-
stand for the elastic constants
- βij = βiδij :
-
symbolize the stress-temperature coefficients. In addition
- θ = T − T 0 :
-
denotes the thermodynamical temperature
- T 0 :
-
is the reference temperature
- N :
-
shows the carrier density
- D Eij :
-
are the diffusion coefficients
- k :
-
marks the thermal activation coupling parameter
- \(\tau\) :
-
stands for the lifetime of photo-generated electron–hole pairs
- G :
-
is the carrier photogeneration “source” term
- K ij :
-
refers to the thermal conductivity tensor
- C E :
-
denotes the specific heat at constant volume
- Q :
-
is the heat source
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Abouelregal, A.E., Sedighi, H.M. & Sofiyev, A.H. Modeling photoexcited carrier interactions in a solid sphere of a semiconductor material based on the photothermal Moore–Gibson–Thompson model. Appl. Phys. A 127, 845 (2021). https://doi.org/10.1007/s00339-021-04971-2
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DOI: https://doi.org/10.1007/s00339-021-04971-2