Abstract
We demonstrate the direct synthesis of CdS thin films by spin coating method with thiol-amine co-solvents system. Annealing of the films at various temperatures has been performed in the air using simple glass protector. The XRD patterns show a strong peak along (110) plane related to cubic lattice while two weak peaks at (002) and (100) planes indicate the hexagonal symmetry for the CdS thin films. The Raman peak at 305 cm−1 also confirms the formation of crystalline CdS thin films. The FTIR study also reveals the formation of CdS thin films. The SEM images reveal the surface uniformity and homogeneity of the CdS thin films. The EDX results indicate nearly stoichiometric CdS thin films. The optical band gap of CdS thin films is ~ 2.4 eV when coated at 2000 rpm and annealed at 300 °C for 5 min. These findings indicate that synthesized CdS films are potential candidates for solution-processed CdTe/CdS solar cells.
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Acknowledgements
This study was partially supported by a Grant (#BS-159, 2017) from the Ministry of Science & Technology, Govt. of Bangladesh. The authors highly appreciate Mr. Yuma Moriya, Graduate School of Science and Engineering, Saitama University, Japan for helping with the Raman measurement. The authors are also indebted to Mr. Md. Saiduzzaman, Center for Crystal Science and Technology, University of Yamanashi, Japan for his help during the XRD analysis.
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Supporting information contains: The variation of thickness with spin coating speed of the CdS thin films, The optical images of CdS thin films annealed at 300°C for different times, The shift of Raman peak and change of intensity with annealing temperature, The SEM images of CdS thin films without and with the Triton X-100 surfactant, The EDX spectra of CdS thin film, The transmittance spectra of CdS thin films (DOCX 528 kb)
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Rahman, M., Hossain, J., Kuddus, A. et al. A novel synthesis and characterization of transparent CdS thin films for CdTe/CdS solar cells. Appl. Phys. A 126, 145 (2020). https://doi.org/10.1007/s00339-020-3331-0
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DOI: https://doi.org/10.1007/s00339-020-3331-0