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The investigation of the annealing temperature for CdS cauliflower-like thin films grown by using CBD

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Abstract

The Cadmium Sulfide (CdS) cauliflower-like thin films were prepared on glass substrates by using chemical bath deposition at 80 °C. The films were annealed at different temperatures (373, 473, 573, 673 and 773 K) for 1 h at ambient air. The XRD results showed that these films were both in cubic and hexagonal structure and there was no structural alteration among films at different annealing temperatures. The SEM images depicted that the as-deposited film and the film annealed at 373 K had a conifer-like structure; at higher annealing temperatures, the conifer-like structures combined and formed cauliflower-like structures. Also, it was found that the optical band gap decreased from 2.42 to 2.39 eV, with the increase of annealing temperature. The electrical measurements (resistivity, carrier concentration and mobility) of the CdS films were carried out by means of Hall Effect at room temperatures.

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Acknowledgments

This research was supported by Mersin University Scientific Research Unit: (contract nos: BAP-FEF FB (HM) 2004-3 and BAP-FEF FB (GCO) 2014-2 YL). The authors would like to thank to University of Mersin.

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Authors and Affiliations

  1. Advanced Technology Research and Application Center, Mersin University, 33343, Yenisehir, Mersin, Turkey

    Gamze Comert Ozcan & Hulya Metin Gubur

  2. Department of Physics, Mersin University, 33343, Yenisehir, Mersin, Turkey

    Hulya Metin Gubur & Soner Alpdogan

  3. Department of Physics, Cukurova University, Balcali, 01330, Saricam, Adana, Turkey

    Birsen Kesik Zeyrek

  4. Program of Opticianry, Vocational School, Toros University, Bahcelievler Campus, 33140, Yenisehir, Mersin, Turkey

    Birsen Kesik Zeyrek

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  1. Gamze Comert Ozcan
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  2. Hulya Metin Gubur
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Correspondence to Hulya Metin Gubur.

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Ozcan, G.C., Metin Gubur, H., Alpdogan, S. et al. The investigation of the annealing temperature for CdS cauliflower-like thin films grown by using CBD. J Mater Sci: Mater Electron 27, 12148–12154 (2016). https://doi.org/10.1007/s10854-016-5368-6

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