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Rare-earth (Dy)-doped (GeS2)80(In2S3)20 thin film: influence of annealing temperature in argon environment on the linear and nonlinear optical parameters

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Abstract

We report the optical properties of thermally evaporated rare-earth (Dy) doped (GeS2)80(In2S3)20 thin film. Film of thickness 1100 nm has been deposited on a microscopic glass slide, and the as-prepared thin film has been characterized using X-ray diffraction, energy dispersive spectroscopy and UV–visible–near infrared spectroscopy. With annealing temperature, the refractive index is noticed to decrease from 2.51 to 2.27, while the optical bandgap is observed to increase from 2.03 to 2.29. The dispersion of the refractive index n for as prepared and annealed thin films have discussed using the single oscillator model proposed by the Wemple–Di Domenico relationship. The observed value of Eo (5.31–4.40 eV) and dispersion energy Ed (28.22–18.18 eV) are decreasing for as prepared and annealed thin films. The increase of bandgap has been explained in terms of the disorder in the system.

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Acknowledgements

The author (A. Dahshan) gratefully thank the Deanship of Scientific Research at King Khalid University for the financial support through research groups program under Grant number (R.G.P.2/113/41). Dr Deep Shikha Sharma is acknowledged for language editing of the manuscript.

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Authors and Affiliations

  1. Applied Science Department, National Institute of Technical Teachers Training and Research, Sector 26, Chandigarh, 160019, India

    Pankaj Sharma & Ashok Kumar

  2. Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, HP, 173234, India

    Vineet Sharma & Ekta Sharma

  3. Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia

    A. Dahshan

  4. Department of Physics, Faculty of Science, Port Said University, Port Said, Egypt

    A. Dahshan

  5. Department of Physics, Faculty of Science and Arts, Jeddah University, Jeddah, Saudi Arabia

    K. A. Aly

  6. Department of Physics, Faculty of Science, Al-Azhar University, Assiut Branch, Asyût, Egypt

    K. A. Aly

  7. School of Physics and Materials Science, Shoolini University, Solan, India

    Pawan Kumar

  8. King Abdullah Institute for Nanotechnology, King Saud University, Riyadh, 11451, Saudi Arabia

    Aslam Khan

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  1. Pankaj Sharma
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Correspondence to Pankaj Sharma.

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Sharma, P., Sharma, V., Sharma, E. et al. Rare-earth (Dy)-doped (GeS2)80(In2S3)20 thin film: influence of annealing temperature in argon environment on the linear and nonlinear optical parameters. Appl. Phys. A 127, 68 (2021). https://doi.org/10.1007/s00339-020-04170-5

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